BAT15-110D
SILICON LOW BARRIER SCHOTTKY DIODE
DESCRIPTION:
The
ASI BAT15-110D
is a silicon low
barrier Schottky diode, Designed for
use in Doublers and Modulators.
PACKAGE STYLE 711
FEATURES INCLUDE:
•
Low R
S
•
Low NF
MAXIMUM RATINGS
V
R
I
F
P
DISS
T
J
T
STG
4.0 V
50 mA
100 mW @ T
C
= 25 °C
-65 °C to +175 °C
-65 °C to +150 °C
CHARACTERISTICS
SYMBOL
V
R
V
F
V
F
C
T
F
SSB
r
F
I
R
= 10
µA
I
F
= 1.0 mA
I
F
= 10 mA
V
R
= 0 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL
4.0
0.31
0.45
f = 1.0 MHz
f = 16 GHz
.10
7.0
10
MAXIM
UNITS
V
V
V
0.12
pF
dB
Ω
F
IF
= 1.5 dB, P
LO
= 0 dBm,
f
IF
= 10.7 MHz
I
F
= 50 mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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