AG602-86
InGaP HBT Gain Block
The Communications Edge
TM
Product Information
Product Features
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•
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DC – 6000 MHz
+19 dBm P1dB at 900 MHz
+33.5 dBm OIP3 at 900 MHz
14 dB Gain at 900 MHz
Single Voltage Supply
SOT-86 SMT Package
Internally matched to 50
Ω
Product Description
The AG602-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG602-86 typically provides 14
dB of gain, +33.5 dBm Output IP3, and +19 dBm P1dB.
The device combines dependable performance with
consistent quality to maintain MTBF values exceeding 100
years at mounting temperatures of +85° C and is housed in
a SOT-86 industry-standard SMT package.
The AG602-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT technology process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG602-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.
Functional Diagram
GND
4
RF In
1
3
RF Out
2
GND
Applications
•
•
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Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications
Parameter
Frequency Range
Gain (900 MHz)
Gain (1900 MHz)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Device Voltage
Device Current
Thermal Resistance
Junction Temperature (3)
Typical Performance
Units
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
°C
/ W
°C
Min
DC
11.9
Typ
900
13.8
12.9
13
17
+19.0
+33.7
+46
4.5
5.16
75
Max
6000
13.9
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
14.0
-12
-17
+19.0
+33.9
4.5
Typical
900
13.8
-13
-17
+19.0
+33.7
4.5
1900
12.9
-17
-16
+18.7
+33.5
4.6
2140
12.7
-16
-15
+18.7
+33.3
4.6
Test conditions: T = 25º C, Supply Voltage = +6 V, R
bias
= 11.2
Ω,
50
Ω
System.
206
177
Test conditions unless otherwise noted.
1. T = 25º C, Supply Voltage = +6 V, R
bias
= 11.2
Ω,
Frequency = 900 MHz, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
-40 to +85
°C
-55 to +125
°C
+7 V
+10 dBm
+250° C
Ordering Information
Part No.
AG602-86
AG602-86PCB
Rating
Description
InGaP HBT Gain Block
700 – 2400 MHz Fully Assembled Eval. Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
June 2003
AG602-86
InGaP HBT Gain Block
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
14.2
-12
-19
+18.9
+34.2
4.5
500
14.0
-12
-17
+19.0
+33.9
4.5
900
13.8
-13
-17
+19.0
+33.7
4.5
1900
12.9
-17
-16
+18.7
+33.5
4.6
2140
12.7
-16
-15
+18.7
+33.3
4.6
The Communications Edge
TM
Product Information
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 11.2
Ω
, I
cc
= 75 mA
2400
12.4
-16
-15
+18.6
+33.0
4.7
3500
11.2
-16
-13
+17.6
5800
9.0
-30
-11
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 5.16 V, Rbias = 11.2
Ω,
Icc = 75 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
16
14
S11, S22 (dB)
Gain (dB)
12
10
8
-40 C
6
0
1
2
Frequency (GHz)
3
4
+25 C
+85 C
0
Return Loss
120
Device Current (mA)
100
80
60
40
20
0
3.4
I-V Curve
-10
-20
-30
S11
-40
S22
Optimal operating point
0
1
2
3
4
5
6
3.8
4.2
4.6
5.0
5.4
5.8
Frequency (GHz)
Output IP2 vs. Frequency
Device Voltage (V)
Noise Figure vs. Frequency
Output IP3 vs. Frequency
40
35
30
25
-40 C
+25 C
+85 C
50
45
NF (dB)
-40 C
+25 C
+85 C
6
5
4
3
2
-40 C
+25 C
+85 C
OIP3 (dBm)
OIP2 (dBm)
40
35
30
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P1dB vs. Frequency
1
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
Frequency (MHz)
Output Power / Gain vs. Input Power
14
13
Gain
Gain (dB)
12
11
10
9
Output Power
frequency = 900 MHz
Frequency (GHz)
Output Power / Gain vs. Input Power
20
16
Output Power (dBm)
Gain (dB)
12
8
4
0
14
12
Gain
10
8
6
Output Power
4
-12
-8
-4
0
Input Power (dBm)
4
8
0
4
8
12
8
4
frequency = 2000 MHz
20
15
10
5
-40 C
+25 C
+85 C
20
16
Output Power (dBm)
P1dB (dBm)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
-12
-8
-4
0
Input Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
June 2003
AG602-86
InGaP HBT Gain Block
Gain vs. Frequency
16
14
Output IP3 vs. Frequency
The Communications Edge
TM
Product Information
Typical Device RF Performance (cont’d)
Supply Bias = +8 V, R
bias
= 38
Ω
, I
cc
= 75 mA
Output IP2 vs. Frequency
40
35
30
25
-40 C
-40 C
+25 C
1
+85 C
3
4
+25 C
+85 C
50
45
40
35
-40 C
+25 C
+85 C
OIP3 (dBm)
Gain (dB)
12
10
8
6
0
2
Frequency (GHz)
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P1dB vs. Frequency
OIP2 (dBm)
30
0
200
400
600
800
1000
Frequency (MHz)
Noise Figure vs. Frequency
20
15
NF (dB)
-40 C
+25 C
+85 C
6
5
4
3
2
-40 C
+25 C
+85 C
P1dB (dBm)
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
1
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Vcc
Icc = 75 mA
Application Circuit
R1
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
AG602-86
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Recommended Component Values
Reference
Designator
50
500
L1
820 nH
220 nH
C1, C2, C4
.018 µF
1000 pF
Ref. Desig.
L1
C1, C2
C3
C4
R1
Frequency (MHz)
900
1900
2200
68 nH
27 nH
22 nH
100 pF
68 pF
68 pF
Size
0603
0603
0603
0805
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018
µF
chip capacitor
Do Not Place
10.0
Ω
1% tolerance
Recommended Bias Resistor Values
S upply
R1 value
S ize
Voltage
6V
11.2 ohms
0805
7V
24.5 ohms
1210
8V
38 ohms
1210
9V
51 ohms
2010
10 V
65 ohms
2010
12 V
91 ohms
2512
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
June 2003
AG602-86
InGaP HBT Gain Block
The Communications Edge
TM
Product Information
Outline Drawing
Product Marking
The component will be marked with an “I”
designator followed by a two-digit numeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 0
Passes at 150 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class II
Passes at 250 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 1
Standard:
JEDEC Standard J-STD-020A
Land Pattern
Mounting Config. Notes
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
June 2003
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