RN4910TE85L datasheet, PDF - EEWORLD Datasheet

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RN4910TE85L: DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size286KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN4910TE85L Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN4910TE85L Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN AND PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V

RN4910TE85L Preview

RN4910

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4910

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Unit: mm

Equivalent Circuit and Bias Resister Values

R1: 4.7kΩ

(Q1, Q2 Common)

Q1 Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V

CBO

V

CEO

V

EBO

I

C

Rating

−50

−5

−100

Unit

V

mA

JEDEC

―

JEITA

―

TOSHIBA

2-2J1A

Weight: 6.8mg (typ.)

Q2 Absolute Maximum Rating Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V

CBO

V

CEO

V

EBO

I

C

Rating

50

5

100

Unit

V

mA

1

2007-11-01

RN4910

Q1, Q2 Common Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

P

C

*

T

j

T

stg

Rating

200

150

−55~150

Unit

mW

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*

Total rating

Marking

Equivalent Circuit

(Top View)

2

2007-11-01

RN4910

Q1 Electrical Characteristics

(Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

I

CBO

I

EBO

h

FE

V

CE (sat)

f

T

C

ob

Test

Circuit

―

Test Condition

V

CB

=

−50V,

I

E

= 0

V

EB

=

−5V,

I

C

= 0

V

CE

=

−5V,

I

C

=

−1mA

I

C

=

−5mA,

I

B

=

−0.25mA

V

CE

=

−10V,

I

C

=

−5mA

V

CB

=

−10V,

I

E

= 0, f = 1MHz

Min

―

120

―

Typ.

―

−0.1

200

3

Max

−100

400

−0.3

―

6

Unit

nA

mA

―

V

MHz

pF

Q2 Electrical Characteristics

(Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

I

CBO

I

EBO

h

FE

V

CE (sat)

f

T

C

ob

Test

Circuit

―

Test Condition

V

CB

= 50V, I

E

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 5V, I

C

= 1mA

I

C

= 5mA, I

B

= 0.25mA

V

CE

= 10V, I

C

= 5mA

V

CB

= 10V, I

E

= 0, f = 1 MHz

Min

―

120

―

Typ.

―

0.1

250

3

Max

100

700

0.3

―

6

Unit

nA

mA

―

V

MHz

pF

Q1, Q2 Common Electrical Characteristics

(Ta = 25°C)

Characteristic

Input resistor

Symbol

R1

Test

Circuit

―

Test Condition

―

Min

3.29

Typ.

4.7

Max

6.11

Unit

kΩ

3

2007-11-01

RN4910

Q1

4

2007-11-01

RN4910

Q2

5

2007-11-01

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RN4910TE85L Related Products

	RN4910TE85L	RN4910(TE85L)	RN4910TE85N	RN4910(TE85R)	RN4910TE85R
Description	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120	120	120	120	120
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2
Number of terminals	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	-
Collector-based maximum capacity	6 pF	-	6 pF	-	6 pF
Maximum operating temperature	150 °C	-	150 °C	-	150 °C
VCEsat-Max	0.3 V	-	0.3 V	-	0.3 V
ECCN code	-	EAR99	EAR99	EAR99	-

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