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RN2201(TPE4,F)

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size446KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

RN2201(TPE4,F) Overview

Small Signal Bipolar Transistor

RN2201(TPE4,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown

RN2201(TPE4,F) Preview

RN2201~RN2206
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2201,RN2202,RN2203
RN2204,RN2205,RN2206
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1201~RN1206
Equivalent Circuit and Bias Resistor Values
Type No.
RN2201
RN2202
RN2203
RN2204
RN2205
RN2206
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
JEITA
TOSHIBA
2-4E1A
Weight: 0.13g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2201~2206
RN2201~2206
RN2201~2204
RN2205, 2206
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN2201~RN2206
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
RN2201~2206
RN2201
RN2202
Emitter cut-off current
RN2203
RN2204
RN2205
RN2206
RN2201
RN2202
DC current gain
RN2203
RN2204
RN2205
RN2206
Collector-emitter
saturation voltage
RN2201~2206
RN2201
RN2202
Input voltage (ON)
RN2203
RN2204
RN2205
RN2206
Input voltage (OFF)
Translation frequency
Collector output
capacitance
RN2201~2204
RN2205, 2206
RN2201~2206
RN2201~2206
RN2201
RN2202
Input resistor
RN2203
RN2204
RN2205
RN2206
RN2201~2204
Resistor ratio
RN2205
RN2206
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0,
f = 1MHz
V
CE
=
−0.2V,
I
C
=
−5mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−5V,
I
C
=
−10mA
V
EB
=
−5V,
I
C
= 0
V
EB
=
−10V,
I
C
= 0
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
Min
−0.82
−0.38
−0.17
−0.082
−0.078
−0.074
30
50
70
80
80
80
−1.1
−1.2
−1.3
−1.5
−0.6
−0.7
−1.0
−0.5
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
−0.1
200
3
4.7
10
22
47
2.2
4.7
1.0
Max
−100
−500
−1.52
−0.71
−0.33
−0.15
−0.145
−0.138
−0.3
−2.0
−2.4
−3.0
−5.0
−1.1
−1.3
−1.5
−0.8
6
6.11
13
28.6
61.1
2.86
6.11
1.1
kΩ
V
MHz
pF
V
V
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2007-11-01
RN2201~RN2206
3
2007-11-01
RN2201~RN2206
4
2007-11-01
RN2201~RN2206
5
2007-11-01

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