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GPA1606G

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size608KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

GPA1606G Overview

Rectifier Diode,

GPA1606G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
GPA1601 - GPA1607
Pb
RoHS
COMPLIANCE
16.0 AMPs. Glass Passivated Rectifiers
TO-220AC
Features
Glass Passivated chip junction
High efficiency, Low VF
High Current capacity
High reliability
High Surge current capability
Low power loss
Green compound with suffix "G" on packing code
& prefix "G" on datecode.
Mechanical Data
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminal
: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds .16"(4.06mm) from case.
Weight: 2.24 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified @Tc = 100℃
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage @ 16.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ TA=125℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
2. Mount on P.C. Board with 3"x5" x0.25" Al-plate
Symbol
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
Cj
RθJC
TJ
TSTG
GPA GPA GPA GPA GPA GPA GPA
1601 1602 1603 1604 1605 1606 1607
50
35
50
100
70
100
200
140
200
400
280
400
16.0
250
1.1
10
250
100
2.0
-65 to +150
-65 to +150
O
Units
V
V
V
A
A
V
uA
pF
C/W
O
O
600
420
600
800
560
800
1000
700
1000
C
C
Note 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Version : B08

GPA1606G Related Products

GPA1606G GPA1602G GPA1603G GPA1604G GPA1607G
Description Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maker Taiwan Semiconductor - - Taiwan Semiconductor Taiwan Semiconductor
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