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T-IXFD76N07-12

Description
Power Field-Effect Transistor, 70V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size128KB,1 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

T-IXFD76N07-12 Overview

Power Field-Effect Transistor, 70V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

T-IXFD76N07-12 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage70 V
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
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