New Product Guide
2002-9
Low-Voltage Bipolar
Transistors with Ultra-High
Speed Switching
Overview
The newly developed high-density pattern (Toshiba
comparison:
×7.5)
allows the low-voltage bipolar transistors to
realize low-saturation voltage and high-speed switching. The
transistors are suitable for use as main switches in DC/DC
converters for portable devices and improve the efficiencies of
the devices. The transistors are housed in a compact
surface-mount packages, yielding a smaller mounting area.
Appearance
●
Low collector-emitter saturation voltage V
CE (sat)
●
High current gain
Features
(Example)
2SC5906: V
CE (sat)
= 0.20 V max. (Test condition: I
C
=
1.6
A, I
B
= 53 mA, Ta = 25℃)
(Example) 2SC5906: h
FE
= 200 to 500 (Test condition: V
CE
= 2 V, I
C
= 0.5 A, Ta = 25℃)
●
Compact surface-mount package
The world’s slimmest TSM and VS-6: 0.85 mm (max) High power dissipation
(Example) 2SC5906: P
C
=
1.25
W
2
When mounted on FR4 board (glass epoxy,
1.6
mm thick, Cu area: 645 mm )
Future Product Lineup
●
Transistors
Product
No.
S3F97*
S3F98*
Rating
V
CBO
(V)
40
120
V
CEO
(V)
30
50
I
C
(A)
3
5
P
C
(W)
0.625
(20)
#
●
Package
TSM
PW-MOLD
Sample
02/4Q
02/4Q
Mass
Production
03/1Q
03/1Q
TPC6D02 Circuit Configuration
and Application Circuit Example
6
5
4
●
Multi-Chip Device (transistor + SBD)
Product
No.
Transistor
TPC6D02
SBD
Rating
V
CBO
(V)
–15
V
RRM
(V)
30
V
CEO
(V)
–15
I
O
(A)
0.7
I
C
(A)
–1.5
I
FSM
(A)
7
0.6
#
P
C
(W)
Package
Sample
Mass
Production
1
Input
VS-6
02/4Q
03/1Q
2
3
Output
*: Prototype no.
#: When mounted on FR4 board (glass epoxy,
1.6
mm thick, Cu area: 645 mm
2
)
TPC6D02
Step-down DC/DC Converter
Package
(Unit: mm)
TSM
VS-6
PW-MOLD
Recommended Applications
●
DC/DC Converter
●
LCD backlight inverter
●
Portable devices
Cellular phones, PDAs, DSCs, video
cameras, notebook PCs, headphone
stereos, etc.
Appearance
2.9
2.8
2.9
2.8
6.5
6.5
7.0
9.5
12.0
min
Package
Dimensions
Rating
Product No.
Rating
V
CBO
(V)
V
CEO
(V)
I
C
(A)
P
C
(W)
Package
2SC5906
40
30
4
1.25
#
TSM
#: When mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2
)
Switching Waveforms
<Turn ON>
I
B
: 0 A
→
I
B
: 50 mA/div
I
C
: 320 mA/div
New product (2SC5906: V
CEO
= 30 V, I
C
= 4 A)
<Turn OFF>
I
B
: 0 A
→
I
B
: 50 mA/div
I
C
: 320 mA/div
I
B
: 0 A I : 320 mA/div
→
C
Enlarged view
of area t
f
I
C
: 0 A
100 ns/div
I
B
: 50 mA/div
t
f
= 23 ns
V
CE
: 5 V/div
I
C
: 0 A
V
CE
: 5 V/div
I
C
: 0 A
t
stg
= 280 ns
→
V
CE
: 0 V
→
V
CE
: 0 V
50 ns/div
V : 5 V/div
→
CE
V
CE
: 0 V
<Turn ON>
I
B
: 0 A
→
I
B
: 50 mA/div
Toshiba conventional product (V
CEO
= 20 V, I
C
= 5 A)
<Turn OFF>
I
B
: 0 A
→
I
B
: 50 mA/div I : 320 mA/div
C
I
B
: 0 A I
C
: 320 mA/div
→
Enlarged view
of area t
f
I
C
: 0 A
100 ns/div
I
B
: 50 mA/div
t
f
= 30 ns
25 ns/div
I
C
: 320 mA/div
V
CE
: 5 V/div
I
C
: 0 A
V
CE
: 5 V/div
50 ns/div
I
C
: 0 A
t
stg
= 310 ns
→
V
CE
: 0 V
→
V
CE
: 0 V
V : 5 V/div
→
CE
V
CE
: 0 V
25 ns/div
<Turn ON>
I
B
: 0 A
→
Competitor’s equivalent product (V
CEO
= 30 V, I
C
= 5 A)
<Turn OFF>
I
B
: 50 mA/div
I
C
: 320 mA/div
I
B
: 0 A
→
I
B
: 50 mA/div I : 320 mA/div
C
V
CE
: 5 V/div Enlarged view
of area t
f
I
C
: 0 A
→
V
CE
: 0 V
t
stg
= 400 ns
100 ns/div
I
C
: 0 A
→
V
CE
: 0 V
I
B
: 0 A I
C
: 320 mA/div
→
I
B
: 50 mA/div
t
f
= 28 ns
V
CE
: 5 V/div
25 ns/div
I
C
: 0 A
→
V
CE
: 0 V
V
CE
: 5 V/div
50 ns/div
♦
Test condition
I
B1
I
B2
Input
V
CC
= 12 V
I
B1
I
B2
R
L
Output
Switching time comparison
between new product and
conventional product
Storage time t
stg
Fall time t
f
310 ns
⇒
280 ns
Shortened by
10%
Shortened by
23%
I
C
= 1.6 A, I
C
/I
B
= 30, Ta = 25℃
The information contained herein is subject to change without notice.
30 ns
⇒
23 ns
The information contained herein is presented only as a guide for the applications of our products.
No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility
of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire
system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily
injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).
These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or
reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage
include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,
combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed
in this document shall be made at the customer's own risk.
Electronic Devices Sales & Marketing Division
1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan
Tel: +81-3-3457-3406
Fax: +81-3-5444-9431
E-mail: semicon@toshiba.co.jp
020612 (D)
Website:
http://www.semicon.toshiba.co.jp/eng/index.html
©2002 TOSHIBA CORPORATION
Printed in Japan
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