L6116DME25 datasheet, PDF - EEWORLD Datasheet

L6116DME25: DescriptionStandard SRAM, 2KX8, 25ns, CMOS, CDIP24, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-24; Categorystorage storage; File Size767KB，7 Pages; ManufacturerLOGIC Devices; Websitehttp://www.logicdevices.com/

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L6116DME25 Overview

Standard SRAM, 2KX8, 25ns, CMOS, CDIP24, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, DIP-24

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	LOGIC Devices
Parts packaging code	DIP
package instruction	DIP, DIP24,.3
Contacts	24
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	25 ns
Other features	AUTOMATIC POWER-DOWN
I/O type	COMMON
JESD-30 code	R-CDIP-T24
JESD-609 code	e0
length	30.48 mm
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)
Maximum seat height	4.953 mm
Maximum standby current	0.00015 A
Minimum standby current	2 V
Maximum slew rate	0.115 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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