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HGTG11N120CN

Description
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
CategoryDiscrete semiconductor    The transistor   
File Size390KB,12 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
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HGTG11N120CN Overview

Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247

HGTG11N120CN Parametric

Parameter NameAttribute value
MakerHarris
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)43 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)210 ns
Nominal on time (ton)21 ns

HGTG11N120CN Related Products

HGTG11N120CN HGT1S11N120CNS9A HGT1S11N120CNS HGTP11N120CN
Description Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-263AB Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-263AB Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown unknown unknown
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 43 A 43 A 43 A 43 A
Collector-emitter maximum voltage 1200 V 1200 V 1200 V 1200 V
Configuration SINGLE SINGLE SINGLE SINGLE
JEDEC-95 code TO-247 TO-263AB TO-263AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 2 2 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES YES NO
Terminal form THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON SILICON SILICON
Nominal off time (toff) 210 ns 210 ns 210 ns 210 ns
Nominal on time (ton) 21 ns 21 ns 21 ns 21 ns
Maker Harris Harris - Harris
Chip information (pretty good)
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