CMOS, Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD) Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD)
CMOS, Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD) Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD)
EH2600TTS-11.059M Parametric
Parameter Name
Attribute value
Brand Name
Ecliptek
Is it lead-free?
Lead free
Is it Rohs certified?
conform to
Maker
ECLIPTEK
Parts packaging code
SMD 5.0mm x 7.0mm
Contacts
4
Manufacturer packaging code
SMD 5.0mm x 7.0mm
Reach Compliance Code
compliant
Other features
TRI-STATE; ENABLE/DISABLE FUNCTION; BULK
maximum descent time
6 ns
Frequency Adjustment - Mechanical
NO
frequency stability
100%
JESD-609 code
e4
Manufacturer's serial number
EH26
Installation features
SURFACE MOUNT
Nominal operating frequency
11.059 MHz
Maximum operating temperature
70 °C
Minimum operating temperature
Oscillator type
LVCMOS
Output load
30 pF
physical size
7.0mm x 5.0mm x 1.6mm
longest rise time
6 ns
Maximum supply voltage
3.6 V
Minimum supply voltage
3 V
Nominal supply voltage
3.3 V
surface mount
YES
maximum symmetry
55/45 %
Terminal surface
Nickel/Gold (Ni/Au)
EH2600TTS-11.059M Preview
EH2600TTS-11.059M
EH26 00
Series
RoHS Compliant (Pb-free) 3.3V 4 Pad 5mm x 7mm
Ceramic SMD LVCMOS High Frequency Oscillator
Frequency Tolerance/Stability
±100ppm Maximum
Operating Temperature Range
0°C to +70°C
RoHS
Pb
Nominal Frequency
11.059MHz
T TS -11.059M
Pin 1 Connection
Tri-State (High Impedance)
Duty Cycle
50 ±5(%)
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Tolerance/Stability
11.059MHz
±100ppm Maximum (Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency Stability over the
Operating Temperature Range, Supply Voltage Change, Output Load Change, First Year Aging at 25°C,
Shock, and Vibration)
±5ppm/year Maximum
0°C to +70°C
3.3Vdc ±0.3Vdc
35mA Maximum (No Load)
2.7Vdc Minimum (IOH= -8mA)
0.5Vdc Maximum (IOH= +8mA)
6nSec Maximum (Measured at 20% to 80% of waveform)
50 ±5(%) (Measured at 50% of waveform)
30pF Maximum
CMOS
Tri-State (High Impedance)
70% of Vdd Minimum to enable output, 20% of Vdd Maximum to disable output, No Connect to enable
output.
±250pSec Maximum, ±100pSec Typical
±50pSec Maximum, ±40pSec Typical
10mSec Maximum
-55°C to +125°C
Aging at 25°C
Operating Temperature Range
Supply Voltage
Input Current
Output Voltage Logic High (Voh)
Output Voltage Logic Low (Vol)
Rise/Fall Time
Duty Cycle
Load Drive Capability
Output Logic Type
Pin 1 Connection
Tri-State Input Voltage (Vih and Vil)
Absolute Clock Jitter
One Sigma Clock Period Jitter
Start Up Time
Storage Temperature Range
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
ESD Susceptibility
Fine Leak Test
Flammability
Gross Leak Test
Mechanical Shock
Moisture Resistance
Moisture Sensitivity
Resistance to Soldering Heat
Resistance to Solvents
Solderability
Temperature Cycling
Vibration
MIL-STD-883, Method 3015, Class 1, HBM: 1500V
MIL-STD-883, Method 1014, Condition A
UL94-V0
MIL-STD-883, Method 1014, Condition C
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 1004
J-STD-020, MSL 1
MIL-STD-202, Method 210, Condition K
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
MIL-STD-883, Method 1010, Condition B
MIL-STD-883, Method 2007, Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev E 2/17/2010 | Page 1 of 5
EH2600TTS-11.059M
MECHANICAL DIMENSIONS (all dimensions in millimeters)
PIN
CONNECTION
Tri-State (High
Impedance)
Ground
Output
Supply Voltage
7.00
±0.15
3
5.00
±0.15
MARKING
ORIENTATION
2
1.4 ±0.1
5.08
±0.15
4
2.20
±0.15
1
1.4 ±0.2
3.68
±0.15
1
2
3
4
LINE MARKING
1
2
3
ECLIPTEK
11.059M
PXXYZZ
P=Configuration Designator
XX=Ecliptek Manufacturing
Code
Y=Last Digit of the Year
ZZ=Week of the Year
1.60 ±0.20
Suggested Solder Pad Layout
All Dimensions in Millimeters
2.0 (X4)
2.2 (X4)
2.88
Solder Land
(X4)
1.81
All Tolerances are ±0.1
www.ecliptek.com | Specification Subject to Change Without Notice | Rev E 2/17/2010 | Page 2 of 5
EH2600TTS-11.059M
OUTPUT WAVEFORM & TIMING DIAGRAM
TRI-STATE INPUT
V
IH
V
IL
CLOCK OUTPUT
V
OH
80% of Waveform
50% of Waveform
20% of Waveform
V
OL
OUTPUT DISABLE
(HIGH IMPEDANCE
STATE)
t
PLZ
Fall
Time
Rise
Time
T
W
T
Duty Cycle (%) = T
W
/T x 100
t
PZL
Test Circuit for CMOS Output
Oscilloscope
Frequency
Counter
+
+
Power
Supply
_
+
Voltage
Meter
_
Current
Meter
_
Supply
Voltage
(V
DD
)
Probe
(Note 2)
Output
0.01µF
(Note 1)
0.1µF
(Note 1)
Ground
C
L
(Note 3)
No Connect
or Tri-State
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and V
DD
pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value C
L
includes sum of all probe and fixture capacitance.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev E 2/17/2010 | Page 3 of 5
EH2600TTS-11.059M
Recommended Solder Reflow Methods
T
P
Critical Zone
T
L
to T
P
Ramp-up
Ramp-down
Temperature (T)
T
L
T
S
Max
T
S
Min
t
S
Preheat
t 25°C to Peak
t
L
t
P
Time (t)
High Temperature Infrared/Convection
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
Additional Notes
3°C/second Maximum
150°C
175°C
200°C
60 - 180 Seconds
3°C/second Maximum
217°C
60 - 150 Seconds
260°C Maximum for 10 Seconds Maximum
250°C +0/-5°C
20 - 40 seconds
6°C/second Maximum
8 minutes Maximum
Level 1
Temperatures shown are applied to body of device.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev E 2/17/2010 | Page 4 of 5
EH2600TTS-11.059M
Recommended Solder Reflow Methods
T
P
Critical Zone
T
L
to T
P
Ramp-up
Ramp-down
Temperature (T)
T
L
T
S
Max
T
S
Min
t
S
Preheat
t 25°C to Peak
t
L
t
P
Time (t)
Low Temperature Infrared/Convection 240°C
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
Additional Notes
5°C/second Maximum
N/A
150°C
N/A
60 - 120 Seconds
5°C/second Maximum
150°C
200 Seconds Maximum
240°C Maximum
240°C Maximum 1 Time / 230°C Maximum 2 Times
10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time
5°C/second Maximum
N/A
Level 1
Temperatures shown are applied to body of device.
Low Temperature Manual Soldering
185°C Maximum for 10 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)
High Temperature Manual Soldering
260°C Maximum for 5 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)
www.ecliptek.com | Specification Subject to Change Without Notice | Rev E 2/17/2010 | Page 5 of 5
CMOS, Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD) Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD)
CMOS, Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD) Quartz Crystal Clock Oscillators XO (SPXO) LVCMOS (CMOS) 3.3Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD)
[font=normal 宋体, Arial, Helvetica, sans-serif][color=#000000][size=12px]I have a question. How do I use Serial under the Energia compiler on the MSP432P40 LaunchPad? [/size][/color][/font] [font=norma...
I am currently using Samsung's S3C2410 processor. I need to write a C program to output a digital voltage signal through the IO port. My QQ is 714538372. Experts please add me. Thank you....
The previous posts were all completed with the devices on the board, but this one was completed with external devices. In this experiment, I used a sensor, a pressure sensor. As the name suggests, the...
The Chinese version of the c8051f340 data sheet should be useful when making SMDs [[i] This post was last edited by simonprince on 2009-9-19 13:32 [/i]]...
As the title says, I have a [color=rgb(0, 75, 133)][backcolor=rgb(245, 245, 245)][font=Arial, Helvetica, sans-serif][url=http://www.mouser.cn/ProductDetail/Texas-Instruments/LAUNCHXL-F28377S/?qs=sGAEp...
On August 24th, Jin Yuzhi, CEO of Huawei's Intelligent Automotive Solutions BU, announced the first automotive application of Huawei Qiankun's unique Limera technology. This technology eliminates t...[Details]
Flip-chip and ball grid array (BGA) are two widely used packaging technologies in the electronics industry. Each has its own advantages and limitations, and in some cases, they can complement each ...[Details]
Logic analyzers are widely used tools in digital design verification and debugging. They can verify the proper functioning of digital circuits and help users identify and troubleshoot faults. They ...[Details]
According to foreign media reports, BMW has just been granted a patent for a screen that could cover the entire roof. BMW hopes to transform at least a portion of the vehicle's headliner into a dis...[Details]
Core point: The automotive industry chain and the humanoid robot industry have collaborative advantages in hardware, software, and scenarios. Upstream and downstream companies in the automotive ind...[Details]
Since the beginning of this year, price wars have intensified, new models have been launched one after another, used cars with zero kilometers have become a hot topic, and the industry's internal c...[Details]
While the current industry consensus is that autonomous vehicles are robots and that their systems are managed using robotics-developed thinking, there are also cases where autonomous driving is ac...[Details]
Pure electric vehicles, structurally speaking, have components such as a power battery. In addition to the power battery, a small battery also powers some low-voltage electrical components and even...[Details]
With the advent of the electric car era, the number of pure electric vehicles has increased significantly, but many car owners do not know how to properly maintain pure electric vehicles. In additi...[Details]
Based on the commutation technology, thyristor rectifiers are classified into two main types. Line-commutated and force-commutated inverters are commonly used, while other commutated inverters, nam...[Details]
With the development of vehicle technology, there are more types of cars. Cars are divided into hybrid, pure electric vehicles, and fuel vehicles. For hybrid cars, they are divided into plug-in hyb...[Details]
Automotive electronics systems are facing a dual challenge of functional safety and cybersecurity.
The NXP
S32K3
series MCUs utilize a deep protection system built with a Hardware Sec...[Details]
The transition to SDVs (software-defined vehicles) involves more than just replacing parts; rather, it involves the organic connection of various elements, from internal vehicle systems to ext...[Details]
Anyone who has driven a pure electric vehicle will find that it starts much faster than a fuel vehicle. So why do pure electric vehicles start so quickly?
We all know that an engine's to...[Details]
System Principle
According to the average imbalance rate of the branch three-phase phase line load and the average value of the branch phase line current, the adjustment of the phase line load...[Details]