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2SA1112_15

Description
Silicon PNP Power Transistors
File Size76KB,4 Pages
ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.
Websitehttp://www.jmnic.com/
Download Datasheet View All

2SA1112_15 Overview

Silicon PNP Power Transistors

JMnic
Product Specification
Silicon PNP Power Transistors
2SA1111 2SA1112
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC2591/2592
・Good
linearity of h
FE
・High
V
CEO
APPLICATIONS
・For
audio frequency, high power
amplifiers application
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA1111
V
CBO
Collector-base voltage
2SA1112
2SA1111
V
CEO
Collector-emitter voltage
2SA1112
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-180
-5
-1
-1.5
20
150
-55~150
V
A
A
W
Open emitter
-180
-150
V
CONDITIONS
VALUE
-150
V
UNIT
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