JMnic
Product Specification
Silicon PNP Power Transistors
2SA1120
DESCRIPTION
・With
TO-126 package
・High
transition frequency
・Low
collector saturation voltage
APPLICATIONS
・Audio
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
5
150
-55½+150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-35
-35
-6
-5
-1
1.5
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1120
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-35
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-0.1A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-4A ; V
CE
=-2V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-35V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-0.1
mA
h
FE-1
DC current gain
I
C
=-500mA ; V
CE
=-2V
200
h
FE-2
DC current gain
I
C
=-4A ; V
CE
=-2V
70
C
ob
Output capacitance
I
E
=0 ; V
CB
=-10V f=1MHz
62
pF
f
T
Transition frequency
I
C
=-500mA ; V
CE
=-2V
170
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1120
Fig.2 Outline dimensions
3
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