JMnic
Product Specification
Silicon PNP Power Transistors
2SA1125
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC2633
・High
breakdown voltage
APPLICATIONS
・For
audio frequency high voltage
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-50
-100
1.5
150
-55~150
UNIT
V
V
V
mA
mA
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-0.1mA ,I
B
=0
I
E
=-10μA ,I
C
=0
I
C
=-30mA; I
B
=-3mA
V
CB
=-100V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-10mA ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-10mA ; V
CE
=-10V
200
90
MIN
-150
-5
TYP.
2SA1125
MAX
UNIT
V
V
-1.0
-1
-1
450
5
V
μA
μA
pF
MHz
h
FE
Classifications
Q
90-155
R
130-220
S
185-330
T
260-450
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1125
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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