JMnic
Product Specification
Silicon PNP Power Transistors
2SA1133 2SA1133A
DESCRIPTION
・With
TO-220 package
・High
breakdown voltage
・High
power dissipation
・Complement
to type 2SC2660/2660A
APPLICATIONS
・For
power amplifier and TV vertical
deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SA1133
V
CEO
Collector-emitter voltage
2SA1133A
V
EBO
I
C
I
CM
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-180
-6
-2.0
-3.0
30
150
-55~150
V
A
A
W
℃
℃
CONDITIONS
Open emitter
VALUE
-200
-150
V
UNIT
V
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA1133 2SA1133A
MIN
TYP.
MAX
UNIT
2SA1133
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1133A
I
C
=-5mA ,I
B
=0
-150
V
-180
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-0.5mA ,I
E
=0
-200
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-0.5mA ,I
C
=0
-6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-500mA; I
B
=-50mA
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-400mA ; V
CE
=-10V
-1.0
V
μA
I
CBO
Collector cut-off current
V
CB
=-200V; I
E
=0
-50
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-50
μA
h
FE-1
DC current gain
I
C
=-150m A ; V
CE
=-10V
60
240
h
FE-2
DC current gain
I
C
=-400mA ; V
CE
=-10V
50
h
FE-1
Classifications
Q
60-140
P
100-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1133 2SA1133A
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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