epitex
Opto-Device & Custom LED
LED CHIP C970-40
SPECIFICATION OF LED CHIP
C970-40
[INFRARED]
1) Commodity Type and Physical Characteristics.
1. Material
GaAs/GaAs
2. Electrode
Top Side
P (anode) side : Au Alloy
Bottom Side N (cathode) side : Au Alloy
3. Electrode Pattern
Fig.1
4. Chip Size
Fig.2
5. Chip Thickness
Fig.2
6. Emission Area
Fig.2
2) Electro-Optical Characteristics
Parameters
Symbol Condition
Forward Voltage
Vf
If=20mA
Reverse Current
Ir
Vr=5V
Power Intensity
Po
If=20mA
Peak Wavelength
l
P
If=20mA
Spectral Radiation
Dl
If=20mA
Bandwidth
RiseTime
tr
If=20mA
FallTime
tf
If=20mA
‡
min.
typ.
1.25
1.0
970
max.
1.35
10
980
0.5
960
unit
V
uA
mW
nm
nm
ns
ns
50
1000
500
Die shall be mounted on TO=18 gold header without resin coated.(Ta=25°C)
[Unit : um]
Fig.1 Electrode Pattern
Fig.2 Chip size and Emission Area
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