JMnic
Product Specification
Silicon PNP Power Transistors
2SA1135
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SC2665
APPLICATIONS
・For
general purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-6
-4
-1
55
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1135
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-80
V
V
CEsat
I
CBO
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
V
CB
=-80V; I
E
=0
-1.0
V
Collector cut-off current
-1.0
mA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-1.0
mA
h
FE
DC current gain
I
C
=-1A ; V
CE
=-4V
40
f
T
Transition frequency
I
E
=0.2A ; V
CE
=-10V
10
MHz
Switching times
μs
μs
μs
t
r
t
stg
Rise time
I
C
=-2A ; V
CC
=-6V
I
B1
=-I
B2
=-0.3A;R
L
=3Ω
1.0
Storage time
0.4
t
f
Fall time
0.15
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1135
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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