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U635H16D1C45G1

Description
2KX8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size366KB,12 Pages
ManufacturerCypress Semiconductor
Environmental Compliance  
Download Datasheet Parametric View All

U635H16D1C45G1 Overview

2KX8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

U635H16D1C45G1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerCypress Semiconductor
Parts packaging codeDIP
package instructionDIP,
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time45 ns
JESD-30 codeR-PDIP-T28
JESD-609 codee3
length37.1 mm
memory density16384 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Number of functions1
Number of terminals28
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height5.1 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm
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