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KM416C256DJ-7

Description
256KX16 FAST PAGE DRAM, 70ns, PDSO40, 0.400 INCH, SOJ-40
Categorystorage    storage   
File Size801KB,35 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM416C256DJ-7 Overview

256KX16 FAST PAGE DRAM, 70ns, PDSO40, 0.400 INCH, SOJ-40

KM416C256DJ-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOJ
package instruction0.400 INCH, SOJ-40
Contacts40
Reach Compliance Codeunknown
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J40
JESD-609 codee0
length26.04 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ40,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height3.76 mm
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm
KM416C256D, KM416V256D
CMOS DRAM
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and
package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is
fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
• Fast Page Mode operation
FEATURES
• Part Identification
- KM416C256D/DL (5V, 512 Ref.)
- KM416V256D/DL (3.3V, 512 Ref.)
Active Power Dissipation
Unit : mW
Speed
-5
-6
-7
Refresh Cycles
Part
NO.
C256D
V256D
V
CC
5V
3.3V
Refresh
cycle
512
Refresh period
Normal
8ms
L-ver
128ms
RAS
UCAS
LCAS
W
• 2 CAS Byte/Wrod Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 40-pin SOJ 400mil and44(40)-pin
TSOP(II) 400mil packages
• Triple +5V±10% power supply(5V product)
• Triple +3.3V±0.3V power supply(3.3V product)
3.3V(512 Ref.)
-
325
290
5V(512 Ref.)
605
495
440
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
Lower
Data in
Buffer
Sense Amps & I/O
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
VBB Generator
Performance Range
Speed
-5
-6
-7
Refresh Timer
Row Decoder
DQ0
to
DQ7
t
RAC
50ns
60ns
70ns
t
CAC
15ns
15ns
20ns
t
RC
90ns
10ns
130ns
t
PC
35ns
40ns
45ns
Remark
5V only
5V/3.3V
5V/3.3V
A0~A8
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Column Decoder
Memory Array
262,144 x16
Cells
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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