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MG15N2YK1

Description
Power Bipolar Transistor, 15A I(C), 1-Element,
CategoryDiscrete semiconductor    The transistor   
File Size300KB,3 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

MG15N2YK1 Overview

Power Bipolar Transistor, 15A I(C), 1-Element,

MG15N2YK1 Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)15 A
Minimum DC current gain (hFE)100
Maximum landing time (tf)6000 ns
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)150 W
VCEsat-Max2.5 V
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