OBSOLETE 8/31/94
MT5C6408
8K x 8 SRAM
SRAM
FEATURES
• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal
process
• Single +5V
±10%
power supply
• Easy memory expansion with
?
CE1, CE2 and
?
O
/
E
?
options
• All inputs and outputs are TTL-compatible
8K x 8 SRAM
PIN ASSIGNMENT (Top View)
28-Pin DIP
(SA-4)
NC
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
WE
CE2
A8
A9
A11
OE
A10
CE1
DQ8
DQ7
DQ6
DQ5
DQ4
OPTIONS
• Timing
9ns access
10ns access
12ns access
15ns access
20ns access
25ns access
• Packages
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
• 2V data retention
MARKING
- 9
-10
-12
-15
-20
-25
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
None
DJ
L
DQ2
DQ3
Vss
• Temperature
Commercial (0°C to +70°C)
Industrial
(-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended
(-55°C to +125°C)
None
IT
AT
XT
28-Pin SOJ
(SD-2)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
WE
CE2
A8
A9
A11
OE
A10
CE1
DQ8
DQ7
DQ6
DQ5
DQ4
• Part Number Example: MT5C6408DJ-15 AT
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
GENERAL DESCRIPTION
The MT5C6408 is organized as a 8,192 x 8 SRAM using a
four-transistor memory cell with a high-speed, low-power
CMOS process. Micron SRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers two chip enables and an output enable on the
x8 organizations. This enhancement can place the outputs
in High-Z for additional flexibility in system design.
MT5C6408
REV. 12/93
Writing to these devices is accomplished when write
enable (?W
/
E) and
/
C
?
E1 inputs are LOW and CE2 is HIGH.
Reading is accomplished when
?
W
/
E and CE2 remain HIGH
and
/
C
/
E and
/
O
/
E go LOW. The device offers a reduced power
standby mode when disabled. This allows system design-
ers to achieve their low standby power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL-compatible.
1
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1993,
Micron Semiconductor, Inc.
OBSOLETE 8/31/94
MT5C6408
8K x 8 SRAM
FUNCTIONAL BLOCK DIAGRAM
Vcc
GND
A
DQ8
A
A
65,536-BIT
MEMORY ARRAY
I/O CONTROL
A
ROW DECODER
DQ1
A
A
CE1
CE2
A
(LSB)
OE
WE
COLUMN DECODER
(LSB)
POWER
DOWN
A
A
A
A
A
A
TRUTH TABLE
MODE
STANDBY
STANDBY
READ
NOT
SELECTED
WRITE
/
C
?
E1
H
X
L
L
L
CE2
X
L
H
H
H
?
W
/
E
X
X
H
H
L
?
O
/
E
X
X
L
H
X
DQ
HIGH-Z
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
STANDBY
ACTIVE
ACTIVE
ACTIVE
MT5C6408
REV. 12/93
2
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1993,
Micron Semiconductor, Inc.
OBSOLETE 8/31/94
MT5C6408
8K x 8 SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
CC
supply relative to V
SS
............... -1V to +7V
Storage Temperature (plastic) .................... -55°C to +150°C
Power Dissipation ............................................................. 1W
Short Circuit Output Current ..................................... 50mA
Voltage on Any Pin Relative to V
SS
............ -1V to V
CC
+1V
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(0°C
≤
T
A
≤
70°C; Vcc = 5V
±10%)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
0V
≤
V
IN
≤
V
CC
Output(s) disabled
0V
≤
V
OUT
≤
V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
V
OH
V
OL
V
CC
4.5
MIN
2.2
-0.5
-5
-5
2.4
0.4
5.5
MAX
V
CC
+1
0.8
5
5
UNITS
V
V
µA
µA
V
V
V
1
1
1
NOTES
1
1, 2
MAX
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Standby
CONDITIONS
/
C
/
E
≤
V
IL
; V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
/
C
/
E
≥
V
IH
; V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
C
/
E
≥
V
CC
-0.2V; V
CC
= MAX
/
V
IN
≤
V
SS
+0.2V or
V
IN
≥
V
CC
-0.2V; f = 0
SYMBOL
I
CC
TYP
125
-9
-10
-12
-15
-20
-25
130
UNITS NOTES
mA
3, 14
190 185 175 165 140
I
SB
1
22
60
50
45
40
35
35
mA
14
I
SB
2
0.5
3
3
3
3
3
5
mA
14
CAPACITANCE
DESCRIPTION
Input Capacitance
Output Capacitance
CONDITIONS
T
A
= 25°C; f = 1 MHz
V
CC
= 5V
SYMBOL
C
I
C
O
MAX
5
7
UNITS
pF
pF
NOTES
4
4
MT5C6408
REV. 12/93
3
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1993,
Micron Semiconductor, Inc.
OBSOLETE 8/31/94
MT5C6408
8K x 8 SRAM
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (0°C
≤
T
A
≤
70°C; V
CC
= 5V
±10%)
DESCRIPTION
SYM
READ Cycle
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE Cycle
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
t
WC
t
CW
t
AW
t
AS
t
AH
t
WP1
t
WP2
t
DS
t
DH
t
LZWE
t
HZWE
-9
-10
-12
-15
-20
-25
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
9
9
9
3
2
5
0
9
4.5
0
4.5
9
7
7
0
0
6
8
5
1
2
4
10
8
8
0
0
7
9
6
1
2
5
0
5
12
10
10
0
0
8
10
7
1
2
5
0
10
5
0
5
15
12
12
0
0
10
14
8
1
2
6
3
2
5
0
12
6
0
6
20
15
15
0
0
12
18
9
1
2
8
10
10
9
3
2
6
0
15
7
0
7
25
20
20
0
0
15
20
10
1
2
8
12
12
10
3
2
7
0
20
8
0
8
15
15
12
3
2
8
0
25
8
20
20
15
3
2
8
25
25
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7, 15
6, 7
6
7
6, 7
MT5C6408
REV. 12/93
4
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1993,
Micron Semiconductor, Inc.
OBSOLETE 8/31/94
MT5C6408
8K x 8 SRAM
INDUSTRIAL TEMPERATURE SPECIFICATIONS (IT)
The following specifications are to be used for Industrial Temperature (IT) MT5C6408 SRAMs.
(-40°C
≤
T
A
≤
85°C)
MAX
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Standby
CONDITIONS
/
C
/
E
≤
V
IL
; V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
/
C
/
E
≥
V
IH
; V
CC
= MAX
f = MAX = 1/
t
RC
outputs open
/
C
/
E
≥
V
CC
-0.2V; V
CC
= MAX
V
IN
≤
V
SS
+0.2V or
V
IN
≥
V
CC
-0.2V; f = 0
SYMBOL
I
CC
-10
195
-12
185
-15
175
-20
150
-25
140
UNITS NOTES
mA
3, 13
I
SB
1
60
50
45
40
40
mA
13
I
SB
2
5
5
5
5
5
mA
13
DATA RETENTION ELECTRICAL CHARACTERISTICS (L version only)
DESCRIPTION
Data Retention Current
CONDITIONS
/
CE
≥
(Vcc -0.2V)
/
V
IN
≥
(V
CC
-0.2V)
or
≤
0.2V
V
CC
= 2V
V
CC
= 3V
SYMBOL
I
CCDR
I
CCDR
TYP
130
210
MAX
300
550
UNITS
µA
µA
NOTES
14
14
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Refer to commercial temperature timing parameters for specifications not listed here.
(Notes 5, 14) (-40°C
≤
T
A
≤
85°C)
DESCRIPTION
READ Cycle
Output hold from address change
Chip Enable to output in Low-Z
WRITE Cycle
Write disable to output in Low-Z
SYM
t
OH
t
LZCE
t
LZWE
-12
-15
-20
-25
MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
2
1
1
2
1
1
2
1
1
2
1
1
ns
ns
ns
7
7
MT5C6408
REV. 12/93
5
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1993,
Micron Semiconductor, Inc.
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