Cache SRAM, 8KX8, 45ns
| Parameter Name | Attribute value |
| Maker | IDT (Integrated Device Technology) |
| package instruction | , |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 45 ns |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | CACHE SRAM |
| memory width | 8 |
| Number of functions | 1 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 8KX8 |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| IDT71564S45DBRT | IDT71564S25DRT | IDT71564L20DRT | IDT71564L25DBRT | IDT71564L25DRT | IDT71564S20DRT | IDT71564L45DBRT | IDT71564L35DRT | IDT71564S25DBRT | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Cache SRAM, 8KX8, 45ns | Cache SRAM, 8KX8, 25ns | Cache SRAM, 8KX8, 20ns | Cache SRAM, 8KX8, 25ns | Cache SRAM, 8KX8, 25ns | Cache SRAM, 8KX8, 20ns | Cache SRAM, 8KX8, 45ns | Cache SRAM, 8KX8, 35ns | Cache SRAM, 8KX8, 25ns |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | 3A001.A.2.C | EAR99 | EAR99 | 3A001.A.2.C | EAR99 | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C |
| Maximum access time | 45 ns | 25 ns | 20 ns | 25 ns | 25 ns | 20 ns | 45 ns | 35 ns | 25 ns |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Maker | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Other features | - | - | BATTERY BACKUP OPERATION | BATTERY BACKUP OPERATION | BATTERY BACKUP OPERATION | - | BATTERY BACKUP OPERATION | BATTERY BACKUP OPERATION | - |