IDT71586S45DB datasheet, PDF - EEWORLD Datasheet

IDT71586S45DB: DescriptionCache SRAM, 4KX16, 45ns, CMOS, CDIP40, 0.600 INCH, CERAMIC, DIP-40; Categorystorage storage; File Size329KB，13 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71586S45DB Overview

Cache SRAM, 4KX16, 45ns, CMOS, CDIP40, 0.600 INCH, CERAMIC, DIP-40

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	0.600 INCH, CERAMIC, DIP-40
Contacts	40
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	45 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T40
JESD-609 code	e0
length	51.943 mm
memory density	65536 bit
Memory IC Type	CACHE SRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	40
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	4KX16
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum seat height	5.588 mm
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.29 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

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