JMnic
Product Specification
Silicon PNP Power Transistors
2SB1225
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD1827
・High
DC current gain.
・Large
current capacity and wide ASO.
・Low
saturation voltage.
・DARLINGTON
APPLICATIONS
・Suitable
for use in control of motor drivers,
printer hammer drivers, relay drivers, and
constant-voltage regulators.
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector dissipation
2
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-70
-60
-6
-10
-15
30
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1225
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-5mA; I
E
=0
I
C
=-50mA; R
BE
=∞
I
C
=-5A ; I
B
=-10mA
I
C
=-5A ; I
B
=-10mA
V
CB
=-40V;I
E
=0
V
EB
=-5V;I
C
=0
I
C
=-5A ; V
CE
=-2V
2000
5000
MIN
-70
-60
-1.0
-1.5
-2.0
-0.1
-3.0
TYP.
MAX
UNIT
V
V
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A; I
B1
=0.01A
-I
B2
=0.01A
V
CC
=20V ,R
L
=4Ω
0.5
1.5
1.7
μs
μs
μs
2
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