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BD533K

Description
Power Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size24KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric View All

BD533K Overview

Power Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BD533K Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz

BD533K Preview

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
BD533, BD535, BD537
BD534, BD536, BD538
BD533, 535, 537
BD534, 536, 538
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
3
B
H
F
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
M IN.
14.42
9.63
3.56
M A X.
N
L
O
1 2 3
D
G
J
M
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
A
O
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector and emitter current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 2 A; I
B
= 0.2 A
D.C. current gain
I
C
= 10 mA; V
CE
= 5 V
V
CBO
V
CEO
I
C
, I
E
P
tot
T
j
V
CEsat
h
FE
All dim insions in m m .
K
533
534
max. 45
max. 45
max.
max.
max.
max.
min.
20
533
534
max.
max.
max.
max.
max.
45
45
45
535
536
60
60
8.0
50
150
0.8
20
535
536
60
60
60
5.0
8.0
537
538
80
80
V
V
A
W
°C
V
15
537
538
80
80
80
V
V
V
V
A
RATINGS
(at T
A
=25°C unless otherwise specified)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector-emitter voltage (V
BE
= 0)
Emitter-base voltage (open collector)
Collector and emitter current
V
CBO
V
CEO
VCES
V
EBO
I
C
, I
E
Continental Device India Limited
Data Sheet
Page 1 of 3
BD533, BD535, BD537
BD534, BD536, BD538
Base current
I
B
Total power dissipation up to T
C
= 25°C P
tot
Junction temperature
T
j
Storage temperature
T
stg
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 80 V
V
BE
= 0; V
CE
= 45V
V
BE
= 0; V
CE
= 60V
V
BE
= 0; V
CE
= 80V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 2.0 A; I
B
= 0.2 A
I
C
= 6.0 A; I
B
= 0.6 A
Base-emitter on voltage
I
C
= 2A; V
CE
= 2V
D.C. current gain
I
C
= 10mA; V
CE
= 5V
I
C
= 500mA; V
CE
= 2V
I
C
= 2A; V
CE
= 2V
Transition frequency
I
C
= 500 mA; V
CE
= 1V
h
FE
Groups:
I
C
= 2A; V
CE
= 2V
I
C
= 3A; V
CE
= 2V
I
C
= 2A; V
CE
= 2V
I
C
= 3A; V
CE
= 2V
* Pulsed: pulse duration = 300 µs; duty cycle = 1.5%.
K
I
CBO
I
CBO
I
CBO
I
CES
I
CES
I
CES
I
EBO
V
CEO(sus)
*
V
CBO
V
EBO
V
CEsat
*
V
CEsat
*
V
BE(on)
*
h
FE
*
h
FE
*
h
FE
*
f
T
J
R
th j–c
R
th j–a
max.
max.
max.
1.0
50
150
–65 to +150
2.5
70
533
534
535
536
100
100
1.0
45
45
60
60
5.0
0.8
0.8
1.5
20
20
40
25
25
3.0
30
75
15
40
100
20
15
15
80
100
537
538
100
100
A
W
°C
ºC
°C/W
°C/W
max. 100
max. –
max. –
max. 100
max. –
max. –
max.
min.
min.
min.
max.
typ.
max.
min.
min.
min.
min.
min.
max.
min.
min.
max.
min.
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3

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