BD535J-6200 datasheet, PDF - EEWORLD Datasheet

BD535J-6200: Description8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size153KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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BD535J-6200 Overview

8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	50 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	12 MHz
VCEsat-Max	0.8 V

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