BD533/535/537
BD533/535/537
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD534, BD536 and BD538 respectively
1
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD533
: BD535
: BD537
: BD533
: BD535
: BD537
: BD533
: BD535
: BD537
1.Base
2.Collector
3.Emitter
Value
45
60
80
45
60
80
45
60
80
5
8
1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
W
°C
°C
V
CES
Collector-Emitter Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C
unless otherwise noted
Symbol
I
CBO
Parameter
Collector Cut-off Current : BD533
: BD535
: BD537
Collector Cut-off Current : BD533
: BD535
: BD537
Emitter Cut-off Current
* DC Current Gain
: BD533/535
: BD537
: ALL DEVICE
: BD533/535
: BD537
: ALL DEVICE
: ALL DEVICE
Test Condition
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 2A
20
15
40
25
15
30
15
40
20
0.8
1.5
3
12
75
100
0.8
V
V
V
MHz
Min.
Typ.
Max.
100
100
100
100
100
100
1
Units
µA
µA
µA
µA
µA
µA
mA
I
CES
I
EBO
h
FE
h
FE
h
FE
Groups
J
K
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
I
C
= 2A, I
B
= 0.2A
I
C
= 6A, I
B
= 0.6A
V
CE
= 2V, I
C
= 2A
V
CE
= 1V, I
C
= 500mA
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD533/535/537
Typical characteristics
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD533/535/537
Package Dimensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
(45
°
)
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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©2000 Fairchild Semiconductor International
Rev. A, January 2000
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