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Datasheet> All Categories > Discrete semiconductor> The transistor> BD828
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BD828

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size4KB，1 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BD828 Overview

Transistor,

BD828 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)75 MHz

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Download Datasheet
Philips Semiconductors
Small-signal Transistors
LEADED DEVICES (continued)
PNP GENERAL PURPOSE POWER TRANSISTORS
TYPE
NUMBER
BD132
BD136
BD136-10
BD136-16
BD138
BD138-10
BD138-16
BD140
BD140-10
BD140-16
BD227
BD229
BD231
BD330
BD826
BD826-10
BD826-16
BD828
BD828-10
BD828-16
BD830
BD830-10
BD830-16
PACKAGE
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
TO-202
TO-202
TO-202
TO-202
TO-202
TO-202
TO-202
TO-202
TO-202
V
CEO
max.
(V)
45
45
45
45
60
60
60
80
80
80
45
60
80
20
45
45
45
60
60
60
80
80
80
I
C
max.
(mA)
3000
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
3000
1000
1000
1000
1000
1000
1000
1000
1000
1000
P
tot
max.
(mW)
15000
8000
8000
8000
8000
8000
8000
8000
8000
8000
12500
12500
12500
15000
2000
2000
2000
2000
2000
2000
2000
2000
2000
h
FE
min.
40
40
63
100
40
63
100
40
63
100
40
40
40
85
40
63
100
40
63
100
40
63
100
h
FE
max.
>40
250
160
250
250
160
250
250
160
250
250
250
250
375
250
160
250
250
160
250
250
160
250
f
T
min.
(MHz)
60
Selection guide
NPN
COMPL.
BD131
PAGE
474
480
480
480
480
480
480
480
480
480
486
486
486
492
498
498
498
498
498
498
498
498
498
160 typ. BD135
160 typ. BD135-10
160 typ. BD135-16
160 typ. BD137
160 typ. BD137-10
160 typ. BD137-16
160 typ. BD139
160 typ. BD139-10
160 typ. BD139-16
50 typ.
50 typ.
50 typ.
75 typ.
75 typ.
75 typ.
75 typ.
75 typ.
75 typ.
75 typ.
75 typ.
75 typ.
BD226
BD228
BD230
BD825
BD825-10
BD825-16
–
–
–
BD829
BD830-10
BD830-16
100 typ. BD329
1997 Jul 21
11

BD828 Related Products

BD828 BD826
Description Transistor, Transistor,
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Maximum collector current (IC) 1 A 1 A
Configuration Single Single
Minimum DC current gain (hFE) 40 40
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 2 W 2 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 75 MHz 75 MHz

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