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BDB01B

Description
TRANSISTOR,BJT,NPN,60V V(BR)CEO,500MA I(C),TO-226AE
CategoryDiscrete semiconductor    The transistor   
File Size162KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BDB01B Overview

TRANSISTOR,BJT,NPN,60V V(BR)CEO,500MA I(C),TO-226AE

BDB01B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)50 MHz
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