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MTD2N40ET4

Description
2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size237KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MTD2N40ET4 Overview

2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET

MTD2N40ET4 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance3.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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