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DIM100WHS17-A000

Description
Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, W, MODULE-7
CategoryDiscrete semiconductor    The transistor   
File Size143KB,8 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Environmental Compliance  
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DIM100WHS17-A000 Overview

Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, W, MODULE-7

DIM100WHS17-A000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDynex
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)100 A
Collector-emitter maximum voltage1700 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1290 ns
Nominal on time (ton)560 ns

DIM100WHS17-A000 Preview

DIM100WHS17-A000
DIM100WHS17-A000
Half Bridge IGBT Module
PDS5715-1.0 Febuary 2004
FEATURES
I
I
I
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Base Plate
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1700V
2.7V
100A
200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
Inverters
7(E
2
)
Motor Controllers
6(G
2
)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100WHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM100WHS17-A000
Note: When ordering, please use the whole part number.
Outline type code:
W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
www.dynexsemi.com
DIM100WHS17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
T
case
= 65˚C
1ms, T
case
= 110˚C
T
case
= 25˚C, T
j
= 150˚C
V
R
= 0, t
p
= 10ms, T
vj
= 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
V
GE
= 0V
-
Test Conditions
Max.
1700
±20
100
200
694
1.87
4000
10
Units
V
V
A
A
W
kA
2
s
V
PC
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Baseplate material: Cu
Creepage distance: 24mm
Symbol
R
th(j-c)
Parameter
Thermal resistance - transistor (per arm)
Clearance: 13mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Min.
-
Typ.
-
Max.
0.18
Units
˚C/W
R
th(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
-
-
0.4
˚C/W
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
0.015
˚C/W
T
j
Junction temperature
-
-
-
–40
3
2.5
-
-
-
-
-
150
125
125
5
5
˚C
˚C
˚C
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM100WHS17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
I
GES
V
GE(TH)
V
CE(sat)†
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
=
±20V,
V
CE
= 0V
I
C
= 5mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 100A
V
GE
= 15V, I
C
= 100A, , T
case
= 125˚C
I
F
I
FM
V
F†
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
= 100A
I
F
= 100A, T
case
= 125˚C
C
ies
L
M
R
INT
SC
Data
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 1000V,
t
p
10µs, V
CE(max)
= V
CES
– L*. di/dt
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals.
* L is the circuit inductance + L
M
I
1
I
2
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.4
-
-
2.2
2.3
8
20
0.23
450
400
Max.
0.5
3
1
6.5
3.4
4.0
100
200
2.5
2.6
-
-
-
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
A
A
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
www.dynexsemi.com
DIM100WHS17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 100A, V
R
= 900V,
dI
F
/dt = 1500A/µs
Test Conditions
I
C
= 100A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 10Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
590
300
20
320
90
25
1
33
100
21
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 100A, V
R
= 900V,
dI
F
/dt = 1500A/µs
Test Conditions
I
C
= 100A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 10Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
880
410
30
450
110
40
50
100
32
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM100WHS17-A000
TYPICAL CHARACTERISTICS
200
200
Common emitter.
T
case
= 25˚C
and not the auxiliary terminals
Common emitter.
T
case
= 125˚C
175
V
ce
is measured at power busbars
and not the auxiliary terminals
175
V
ce
is measured at power busbars
150
150
Collector current, I
C
- (A)
Collector current, I
C
- (A)
125
100
75
50
V
GE
= 20V
15V
12V
10V
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
125
100
75
50
25
0
0
V
GE
= 20V
15V
12V
10V
0.5
1
1.5 2 2.5 3 3.5 4 4.5 5
Collector-emitter voltage, V
ce
- (V)
5.5
6
25
0
0
Collector-emitter voltage, V
ce
- (V)
Fig. 3 Typical output characteristics
70
Fig. 4 Typical output characteristics
40
Conditions:
T
c
= 125˚C,
35 R
g
= 10 ohms,
V
cc
= 900V
30
Switching energy, E
sw
- (mJ)
25
20
15
10
5
0
0
E
on
E
off
E
rec
10
20
30
40
50 60
70
Collector current, I
C
- (A)
80
90
100
Conditions:
T
c
= 125˚C,
I
C
= 100A,
60 V
cc
= 900V
50
Switching energy, E
sw
- (mJ)
40
30
20
10
0
8
E
on
E
off
E
rec
10
12
14
16
Gate resistance, R
g
- (Ohms)
18
20
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
www.dynexsemi.com
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