TetraFET
D2201UK.S
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
17.5W
40V
±20V
2A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 2/98
D2201UK.S
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 12.5V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 2.5W
V
DS
= 12.5V
f = 1GHz
V
DS
= 0
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
I
DQ
= 0.1A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.2A
1
0.18
10
40
20:1
40
Typ.
Max. Unit
V
1
1
7
mA
m
A
V
S
dB
%
—
V
GS(th)
Gate Threshold Voltage*
h
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
12
10
1
pF
pF
pF
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 10°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 2/98
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