DIM200BSS17-A000
DIM200BSS17-A000
Single Switch IGBT Module
FDS5669-2.4 December 2003
FEATURES
I
I
I
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1700V
2.7V
200A
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
Inverters
Motor Controllers
2(E)
5(E
1
)
3(G
1
)
4(C
1
)
1(C)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200BSS17-A000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM200BSS17-A000
Note: When ordering, please use the whole part number.
Outline type code:
B
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
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DIM200BSS17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
T
case
= 65˚C
1ms, T
case
= 110˚C
T
case
= 25˚C, T
j
= 150˚C
V
R
= 0, t
p
= 10ms, T
vj
= 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
V
GE
= 0V
-
Test Conditions
Max.
1700
±20
200
400
1390
7.5
4000
10
Units
V
V
A
A
W
kA
2
s
V
PC
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200BSS17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Baseplate material: Cu
Creepage distance: 24mm
Symbol
R
th(j-c)
Parameter
Thermal resistance - transistor
Clearance: 13mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Min.
-
Typ.
-
Max.
90
Units
˚C/kW
R
th(j-c)
Thermal resistance - diode)
Continuous dissipation -
junction to case
-
-
200
˚C/kW
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
15
˚C/kW
T
j
Junction temperature
-
-
-
–40
3
2.5
1.1
-
-
-
-
-
-
150
125
125
5
5
2
˚C
˚C
˚C
Nm
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M4
Electrical connections - M6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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DIM200BSS17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
I
GES
V
GE(TH)
V
CE(sat)†
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
=
±20V,
V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, , T
case
= 125˚C
I
F
I
FM
V
F†
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
= 200A
I
F
= 200A, T
case
= 125˚C
C
ies
L
M
R
INT
SC
Data
Input capacitance
Module inductance
Internal transistor resistance
Short circuit. I
SC
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 1000V,
t
p
≤
10µs, V
CE(max)
= V
CES
– L*. di/dt
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals.
* L is the circuit inductance + L
M
I
1
I
2
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.4
-
-
2.2
2.3
15
20
0.23
900
800
Max.
1
6
2
6.5
3.4
4.0
200
400
2.5
2.6
-
-
-
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
A
A
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200BSS17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 200A, V
R
= 900V,
dI
F
/dt = 3000A/µs
Test Conditions
I
C
= 200A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
590
300
40
320
90
50
2
65
195
42
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 200A, V
R
= 900V,
dI
F
/dt = 2500A/µs
Test Conditions
I
C
= 200A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
880
410
60
450
110
85
100
195
64
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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