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D41D8

Description
TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),TO-202AC
CategoryDiscrete semiconductor    The transistor   
File Size186KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

D41D8 Overview

TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),TO-202AC

D41D8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)120
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)6.2 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)150 MHz

D41D8 Related Products

D41D8 D41D2 D41D5
Description TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),TO-202AC TRANSISTOR,BJT,PNP,30V V(BR)CEO,1A I(C),TO-202AC TRANSISTOR,BJT,PNP,45V V(BR)CEO,1A I(C),TO-202AC
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant not_compliant
Maximum collector current (IC) 1 A 1 A 1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 120 120 120
JESD-609 code e0 e0 e0
Maximum operating temperature 140 °C 140 °C 140 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 6.2 W 6.2 W 6.2 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Maker Renesas Electronics Corporation - Renesas Electronics Corporation

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