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D41D8-TYPE1

Description
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202AB, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size91KB,3 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

D41D8-TYPE1 Overview

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202AB, Plastic/Epoxy, 3 Pin

D41D8-TYPE1 Parametric

Parameter NameAttribute value
MakerHarris
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-202AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment6.25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max1 V
Wireless power transmission device
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