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D5013UKG4

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, DP, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size245KB,6 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

D5013UKG4 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, DP, 2 PIN

D5013UKG4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
package instructionFLANGE MOUNT, S-CDFM-F2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage125 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeS-CDFM-F2
JESD-609 codee4
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
TetraFET
D5013UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
N
(typ)
B
3
D
(2 pls)
2
1
A
F
(2 pls)
H
J
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 50V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
DP
PIN 1
PIN 3
SOURCE
GATE
PIN 2
DRAIN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• USEFUL P
O
AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
DIM
mm
A
16.51
B
6.35
C
45°
D
3.30
E
18.92
F
1.52
G
2.16
H
14.22
I
1.52
J
6.35
K
0.13
M
5.08
N 1.27 x 45°
Tol.
0.25
0.13
0.13
0.08
0.13
0.13
0.08
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.130
0.745
0.060
0.085
0.560
0.060
0.250
0.005
0.200
0.050 x 45°
Tol.
0.010
0.005
0.005
0.003
0.005
0.005
0.003
0.005
0.005
0.001
0.020
0.005
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
125V
±20V
3A
–65 to 150°C
200°C
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 3918
Issue 2

D5013UKG4 Related Products

D5013UKG4
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, DP, 2 PIN
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker SEMELAB
package instruction FLANGE MOUNT, S-CDFM-F2
Contacts 2
Reach Compliance Code compliant
ECCN code EAR99
Other features LOW NOISE
Shell connection SOURCE
Configuration SINGLE
Minimum drain-source breakdown voltage 125 V
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code S-CDFM-F2
JESD-609 code e4
Number of components 1
Number of terminals 2
Operating mode ENHANCEMENT MODE
Maximum operating temperature 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface GOLD
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
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