FSPL234R, FSPL234F
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
Single Event Effects (SEE) which the Fairchild FS families
have always featured.
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
Star*Power Gold products. Star*Power FETs are optimized
for total dose and r
DS(ON)
performance while exhibiting SEE
capability at full rated voltage up to an LET of 37. Star*Power
Gold FETs have been optimized for SEE and Gate Charge
providing SEE performance to 80% of the rated voltage for
an LET of 82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45216W.
Features
• 7A, 250V, r
DS(ON)
= 0.245Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 4.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
D
G
S
Packaging
TO-205AF
Ordering Information
RAD LEVEL
10K
100K
100K
300K
300K
SCREENING LEVEL
Engineering samples
TXV
Space
TXV
Space
PART NUMBER/BRAND
FSPL234D1
FSPL234R3
FSPL234R4
FSPL234F3
FSPL234F4
D
G
S
©2001 Fairchild Semiconductor Corporation
FSPL234R, FSPL234F Rev. B
FSPL234R, FSPL234F
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSPL234R, FSPL234F
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
25
10
0.20
28
7
28
-55 to 150
300
1.0 (Typical)
W
W
W/
o
C
A
A
A
o
C
o
C
UNITS
V
V
A
A
A
V
250
250
7
4
28
±30
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
250
-
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 12V
V
DD
= 125V,
I
D
= 7A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 7A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.215
-
-
-
-
-
30
10
8
45
3
6.5
1400
200
8
-
MAX
-
5.5
4.5
-
25
250
100
200
1.75
0.245
0.485
20
40
35
15
33
12
10
-
-
-
-
-
-
5.0
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DS
= 200V,
V
GS
= 0V
V
GS
=
±30V
V
GS
= 12V, I
D
= 7A
I
D
= 4A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V
DD
= 125V, I
D
= 7A,
R
L
= 17.9Ω, V
GS
= 12V,
R
GS
= 7.5Ω
©2001 Fairchild Semiconductor Corporation
FSPL234R, FSPL234F Rev. B
FSPL234R, FSPL234F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
T
C
= 25
o
C, Unless Otherwise Specified
MIN
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 7A
V
GS
= 12V, I
D
= 4A
250
2.0
-
-
-
-
MAX
-
4.5
100
25
1.75
0.245
-
-
MIN
250
1.5
4.5
100
50
2.52
0.300
MAX
UNITS
V
V
nA
µA
V
Ω
100K RAD
300K RAD
I
SD
= 7A
I
SD
= 7A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.7
MAX
1.5
360
-
UNITS
V
ns
µC
Electrical Specifications up to 300K RAD
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ION
SPECIES
Br
Br
I
I
Au
Au
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
37
37
60
60
82
82
TYPICAL
RANGE (µ)
36
36
32
32
28
28
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
200
200
150
150
100
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 32µ
LET = 82MeV/mg/cm
2
, RANGE = 28µ
280
240
200
V
DS
(V)
160
120
80
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
V
DS
(V)
280
240
200
160
120
80
LET = 82 GOLD
40
LET = 37 BROMINE
40
0
0
0
-4
-8
V
GS
(V)
-12
-16
-20
0
-5
-10
LET = 60 IODINE
-15
V
GS
(V)
-20
-25
-30
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
©2001 Fairchild Semiconductor Corporation
FSPL234R, FSPL234F Rev. B
FSPL234R, FSPL234F
Performance Curves
1E-3
LIMITING INDUCTANCE (HENRY)
8
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
I
D
, DRAIN (A)
6
Unless Otherwise Specified
(Continued)
4
2
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
100
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
12V
10
Q
G
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
Q
GS
V
G
Q
GD
10ms
CHARGE
FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
I
D
, DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 4A
2.0
NORMALIZED r
DS(ON)
40
DESCENDING ORDER
V
GS
= 14V
V
GS
= 12V
V
GS
= 10V
V
GS
= 8V
30
1.5
20
1.0
10
V
GS
= 6 V
0.5
0.0
-80
0
-40
0
40
80
120
160
0
4
8
12
16
20
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
FSPL234R, FSPL234F Rev. B
FSPL234R, FSPL234F
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
θJC
)
10
Unless Otherwise Specified
(Continued)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
t
2
10
1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
100
I
AS
, AVALANCHE CURRENT (A)
10
STARTING T
J
= 150
o
C
1
STARTING T
J
= 25
o
C
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
50Ω
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FSPL234R, FSPL234F Rev. B
京公网安备 11010802033920号
EEWORLD
