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DD62S6K

Description
Rectifier Diode, 1 Phase, 2 Element, 76A, 600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size184KB,4 Pages
ManufacturerEUPEC [eupec GmbH]
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DD62S6K Overview

Rectifier Diode, 1 Phase, 2 Element, 76A, 600V V(RRM), Silicon,

DD62S6K Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current1900 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current76 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER

DD62S6K Preview

European Power-
Semiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
DD 62 S
M5x11 Z4-1
15,5
20
80
92
20
AK
K
A
March 1998
DD 62 S
Elektrische Eigenschaften
Höchstzulässige Werte
Periodische Spitzensperrspannung
Stoßspitzenspannung
Durchlaßstrom-Grenzeffektivwert
Dauergrenzstrom
Stoßstrom-Grenzwert
Grenzlastintegral
Electrical properties
Maximum rated values
repetitive peak reverse voltage
non-repetitive peak reverse voltage
RMS forward current
average forward current
surge current
∫I
t-value
2
t
vj
= -40°C...t
vj max
t
vj
= +25°C...t
vj max
t
c
= 100°C
t
c
= 84°C
t
vj
45°C, t
p
= 10 ms
t
vj
150°C, t
p
= 10 ms
t
vj
45°C, t
p
= 10 ms
t
vj
150°C, t
p
= 10 ms
V
RRM
V
RSM
= V
RRM
I
FRMSM
I
FAVM
I
FSM
∫I
t
2
400 600 800
V
1000
400 600 800
V
1000
120 A
61 A
76 A
1900 A
1600 A
18050 A
2
s
12800 A
2
s
Charakteristische Werte
Durchlaßspannung
Schleusenspannung
Ersatzwiderstand
Sperrstrom
Nachlaufladung
Isolations-Prüfspannung
Characteristic values
forward voltage
threshold voltage
slope resistance
reverse current
lag charge
insulation test voltage
t
vj
= 150°C, i
F
= 230 A
v
F
V
(TO)
r
T
max. 1,62 V
1,0 V
2,2 mΩ
40 mA
25 µAs
2,5 kV
t
vj
= 150°C, v
R
= V
RRM
i
FM
= 120 A, -di
F
/dt = 100 A/µs
RMS, f = 50 Hz, t = 1 min.
i
R
Q
S
V
ISOL
Thermische Eigenschaften
Innerer Wärmewiderstand
Thermal properties
thermal resistance, junction
to case
Θ
=180°el. sin: pro Modul/per module R
thJC
pro Zweig/per arm
DC: pro Modul/per module
pro Zweig/per arm
0,305 °C/W
0,61 °C/W
0,310 °C/W
0,620 °C/W
Übergangs-Wärmewiderstand
Höchstzul.Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
pro Modul/per module
pro Zweig/per arm
R
thCK
t
vj max
t
c op
t
stg
0,08 °C/W
0,16 °C/W
150 °C
-40...+150 °C
-40...+150 °C
Mechanische Eigenschaften
Innere Isolation
Anzugsdrehmomente
mechanische Befestigung
elektrische Anschlüsse
Gewicht
Kriechstrecke
Schwingfestigkeit
Mechanical properties
internal insulation
tightening torques
mounting torque
terminal connection torque
weight
creepage distance
vibration resistance
f = 50 Hz
Toleranz/tolerance +/- 15%
Toleranz/tolerance +5%/-10%
M1
M2
G
6 Nm
6 Nm
typ. 200 g
14 mm
5
9,81 m/s²
AIN
DD 62 S
300
Q
r
[µAs]
200
300
I
RM
[A]
200
320 A
I
FM
= 1280 A
640 A
320 A
160 A
I
FM
= 1280 A
640 A
160 A
80 A
40 A
20 A
10 A
100
80 A
40 A
20 A
100
0
DD 62 S/1
50
100
150
200
-di
F
/dt [A/µs]
10 A
250
0
DD 62 S/2
50
100
150
200
-di
F
/dt [A/µs]
250
Bild / Fig. 1
Sperrverzögerungsladung Q
r
= f(-di/dt), t
vj
= t
vj (max)
, v
R
0,5 V
RRM
,
v
RM
= 0,8 V
RRM
/
Recovered charge Q
r
= f(-di/dt), t
vj
= t
vj (max)
, v
R
0,5 V
RRM
,
v
RM
= 0,8 V
RRM
Parameter: Durchlaßstrom / On-state current I
FM
Bild / Fig. 2
Rückstromspitze I
RM
= f(-di/dt), t
vj
= t
vj (max)
, v
R
0,5 V
RRM
, v
RM
= 0,8 V
RRM
Peak reverse recovery current I
RM
= f(-di/dt), t
vj
= t
vj (max)
, v
R
0,5 V
RRM
,
v
RM
= 0,8 V
RRM
Parameter: Durchlaßstrom / On-state current I
TM
0.80
0.70
Z
(th) JC
0.60
[
°
C/W]
0.50
0.40
0.30
0.20
0.10
1. Konstantstrom
2. Sinus,
F=50Hz, Stromflußwinkel: 180°
3. Rechteck, F=50Hz, Stromflußwinkel: 180°
4. Rechteck, F=50Hz, Stromflußwinkel: 120°
5. Rechteck, F=50Hz, Stromflußwinkel: 60°
Analytische Elemente des transienten Wärmewiderstandes Z
thJC
pro Zweig für DC
Analytical elements of transient thermal impedance Z
thJC
per arm for DC
Pos. n
R
thn
[°C/W]
τ
n
[s]
1
0,0102
0,00112
2
0,0329
0,0175
3
0,0805
0,322
4
0,0741
1,21
5
0,072
7,5
6
7
Analytische Funktion / Analytical function:
Z
thJC
=
5.
4.
3.
2.
1.
n
max
n=1
Σ
-
R
thn
(1-e
τ
n
)
t
0
10
-3
DD 61 S/3
10
-2
10
-1
10
0
10
1
t [s]
10
2
Bild / Fig. 3
Transienter innerer Wärmewiderstand Z
thJC
für einen Zweig bei sinus- und
trapezförmigem Stromverlauf /
Transient thermal impedance Z
thJC
, junction to case per arm at sinussoidal
and trapezoidal waveform
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.

DD62S6K Related Products

DD62S6K DD62S4K DD62S8K
Description Rectifier Diode, 1 Phase, 2 Element, 76A, 600V V(RRM), Silicon, Rectifier Diode, 1 Phase, 2 Element, 76A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 2 Element, 76A, 800V V(RRM), Silicon,
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH]
Reach Compliance Code unknown unknown unknown
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
Maximum non-repetitive peak forward current 1900 A 1900 A 1900 A
Number of components 2 2 2
Phase 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 76 A 76 A 76 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 400 V 800 V
surface mount NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
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