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DS2009R-65

Description
FIFO, 512X9, 65ns, Asynchronous, CMOS, PQCC32,
Categorystorage    storage   
File Size213KB,14 Pages
ManufacturerDALLAS
Websitehttp://www.dalsemi.com
Download Datasheet Parametric View All

DS2009R-65 Overview

FIFO, 512X9, 65ns, Asynchronous, CMOS, PQCC32,

DS2009R-65 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDALLAS
Reach Compliance Codeunknown
Maximum access time65 ns
Other featuresRETRANSMIT
Maximum clock frequency (fCLK)12.5 MHz
period time80 ns
JESD-30 codeS-PQCC-J32
JESD-609 codee0
memory density4608 bit
Memory IC TypeOTHER FIFO
memory width9
Number of functions1
Number of terminals32
word count512 words
character code512
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512X9
Output characteristics3-STATE
ExportableNO
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.008 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
DS2009
DS2009
512 x 9 FIFO Chip
FEATURES
PIN ASSIGNMENT
W
D8
D3
D2
D1
D0
XI
FF
Q0
Q1
Q2
Q3
Q8
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
D4
D5
D6
D7
D2
D1
D0
D3
D8
W
NC
VCC
D4
D5
4 3 2 1 32 31 30
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13 15
17 19 21
14 16
18
20
Q3
Q8
GND
NC
R
Q4
Q5
32-Pin PLCC
051994 1/14
D6
D7
NC
FL/RT
RS
EF
X0/HF
Q7
Q6
First-in, first-out memory-based architecture
Flexible 512 x 9 organization
Low-power HCMOS technology
Asynchronous and simultaneous read/write
Bidirectional applications
Fully expandable by word width or depth
Empty and full warning flags
Half-full flag capability in single-device mode
Retransmit capability
High performance
Available in 35 ns, 50 ns, 65 ns, 80 ns, and 120 ns
access times
FL/RT
XI
RS
FF
EF
Q0
X0/HF
Q1
Q7
NC
Q6
Q2
Q5
Q4
R
28-Pin DIP(300 and 600 Mil)
PIN DESCRIPTION
W
R
RS
FL/RT
D
0-8
Q
0-8
XI
XO/HF
FF
EF
V
CC
GND
NC
WRITE
READ
RESET
First Load/Retransmit
Data In
Data Out
Expansion In
Expansion Out/Half Full
Full Flag
Empty Flag
5 Volts
Ground
No Connect
Optional industrial temperature range -40°C to +85°C
available, designated N
DESCRIPTION
The DS2009 512 x 9 FIFO Chip implements a first-in,
first-out algorithm featuring asynchronous read/write
operations, full, empty and half-full flags, and unlimited
expansion capability in both word size and depth. The
main application of the DS2009 is as a rate buffer, sourc-
ing and absorbing data at different rates (e.g., interfac-
ing fast processors and slow peripherals). The full and
empty flags are provided to prevent data overflow and
underflow. A half-full flag is available in the single-de-
vice and width-expansion configurations. The data is
loaded and emptied on a first-in, first-out (FIFO) basis,
and the latency for the retrieval of data is approximately
one load cycle (write). Since the writes and reads are
internally sequential, thereby requiring no address infor-
mation, the pinout definition will serve this and future
higher-density devices. The ninth bit is provided to sup-
port control or parity functions.
ECopyright
1995 by Dallas Semiconductor Corporation.
All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor databooks.

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