EEWORLDEEWORLDEEWORLD

Part Number

Search

BPX90

Description
PHOTO DIODE, PLASTIC, DIL-2
CategoryLED optoelectronic/LED    photoelectric   
File Size186KB,6 Pages
ManufacturerOsram Opto Semiconductor
Websitehttps://www.osram.com/index-2.jsp
Download Datasheet Parametric View All

BPX90 Overview

PHOTO DIODE, PLASTIC, DIL-2

BPX90 Parametric

Parameter NameAttribute value
MakerOsram Opto Semiconductor
package instructionPLASTIC, DIL-2
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum dark power180 nA
Infrared rangeYES
Nominal photocurrent0.032 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-40 °C
peak wavelength830 nm
Maximum response time0.0000013 s
Minimum reverse breakdown voltage32 V
Maximum reverse voltage32 V
Semiconductor materialSilicon
shapeRECTANGULAR
size3.15 mm
surface mountNO

BPX90 Preview

Silizium-Fotodiode
Silicon Photodiode
BPX 90
BPX 90 F
BPX 90
BPX 90 F
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm (BPX 90) und bei
950 nm (BPX 90 F)
• Hohe Fotoempfindlichkeit
• DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPX 90
BPX 90 F
Bestellnummer
Ordering Code
Q62702-P47
Q62702-P928
Features
• Especially suitable for applications from
400 nm to 1100 nm (BPX 90) and of 950 nm
(BPX 90 F)
• High photosensitivity
• DIL plastic package with high packing density
Applications
• Industrial electronics
• For control and drive circuits
2001-02-21
1
BPX 90, BPX 90 F
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Löttemperatur (Lötstelle 2 mm vom Gehäuse
entfernt bei Lötzeit
t
3 s)
Soldering temperature in 2 mm distance from case
bottom (
t
3 s)
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Kennwerte
T
A
= 25
°C
Characteristics
Bezeichnung
Parameter
Fotostrom
Photocurrent
V
R
= 5 V, Normlicht/standard light A,
T
= 2856 K,
E
V
= 1000 lx
V
R
= 5 V,
λ
= 950 nm,
E
e
= 1 mW/cm
2
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Symbol
Symbol
BPX 90
Wert
Value
BPX 90 F
Einheit
Unit
Symbol
Symbol
Wert
Value
– 40 … + 80
230
Einheit
Unit
°C
°C
T
op
;
T
stg
T
S
V
R
P
tot
32
100
V
mW
I
P
I
P
λ
S max
λ
45 (≥ 32)
830
26 (≥ 16)
950
µA
µA
nm
400 … 1150 800 … 1150 nm
A
5.5
1.75
×
3.15
0.5
±
60
5.5
1.75
×
3.15
0.5
±
60
mm
2
mm
×
mm
mm
Grad
deg.
Abmessung der bestrahlungsempfindlichen Fläche
L
×
B
L
×
W
Dimensions of radiant sensitive area
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
Halbwinkel
Half angle
H
ϕ
2001-02-21
2
BPX 90, BPX 90 F
Kennwerte
T
A
= 25
°C
Characteristics
(cont’d)
Bezeichnung
Parameter
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit,
λ
= 950 nm
Spectral sensitivity
Quantenausbeute,
λ
= 950 nm
Quantum yield
Leerlaufspannung
Open-circuit voltage
E
v
= 1000 Ix, Normlicht/standard light A,
T
= 2856 K
E
e
= 0.5 mW/cm
2
,
λ
= 950 nm
Kurzschlußstrom
Short-circuit current
E
v
= 1000 Ix, Normlicht/standard light A,
T
= 2856 K
E
e
= 0.5 mW/cm
2
,
λ
= 950 nm
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 1 kΩ;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 30
µA
Durchlaßspannung,
I
F
= 80 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Symbol
Symbol
BPX 90
Wert
Value
BPX 90 F
5 (≤ 180)
0.48
0.62
nA
A/W
Electrons
Photon
5 (≤ 180)
0.48
0.62
Einheit
Unit
I
R
S
λ
η
V
O
V
O
450 (≥ 380)
400 (≥ 340)
mV
mV
I
SC
I
SC
t
r
,
t
f
45
1.3
13
1.3
µA
µA
µs
V
F
C
0
1.3
430
1.3
430
V
pF
2001-02-21
3
BPX 90, BPX 90 F
Kennwerte
T
A
= 25
°C
Characteristics
(cont’d)
Bezeichnung
Parameter
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Normlicht/standard light A
λ
= 950 nm
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
λ
= 950 nm
Nachweisgrenze,
V
R
= 10 V,
λ
= 950 nm
Detection limit
Directional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
Symbol
Symbol
BPX 90
Wert
Value
BPX 90 F
– 2.6
– 2.6
Einheit
Unit
mV/K
TC
V
TC
I
TC
I
NEP
0.18
8
×
10
– 14
0.2
8
×
10
– 14
%/K
%/K
W
-----------
-
Hz
cm
×
Hz
-------------------------
-
W
D*
2.9
×
10
12
2.9
×
10
12
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-02-21
4
BPX 90, BPX 90 F
Relative Spectral Sensitivity
BPX 90
S
rel
=
f
(λ)
Relative Spectral Sensitivity
BPX 90 F
S
rel
=
f
(λ)
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-Circuit Volt. BPX 90
V
O
=
f
(
E
v
)
Photocurrent
I
P
=
f
(
E
e
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
e
)
BPX 90 F
Total Power Dissipation
P
tot
=
f
(
T
A
)
Dark Current
I
R
=
f
(
V
R
),
E
= 0
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
2001-02-21
5
[GD32E231 DIY Contest] 3. Timer + button (supports long press and short press) + LED
Today I made a LED program and a button program. This board has only one button, which is indeed a bit too few. In this case, in addition to adding peripheral buttons, we can perform different functio...
hehung GD32 MCU
Questions about digital tube connection
Generally, N-bit digital tubes need to be connected with N+8 wires, of which N are for bit control and 8 are for segment control. I found that some ICs (such as max6951) use 9 wires to connect 8 digit...
ifree6 Embedded System
I can't find the ntifs.h header file. I've been trying to find it for two days. Can someone help me?
The development environment IFS2003 + VS2008 + DDKWIZARD is very good for developing ordinary drivers. But one day I wanted to try a file driver: I copied the code in sfilter into a driver project I b...
zhtwn Embedded System
Why does my UART1 not generate a receive interrupt?
DX, please help me see why my UART1 does not generate a receive interrupt!!The initialization is as follows:///////////////////////////////////////////////Serial port 1 initializationvoid Uart1Init(vo...
CENTURYYUAN stm32/stm8
The temperature control module made of max1978 chip broke down again
The board made of max1978 chip has a large current at the beginning of power-on, and then it will become smaller. When powered on, the large current often cannot be reduced. After inspection, it was f...
秋天的琴湖 Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2062  646  2475  1550  2023  42  14  50  32  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号