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BB835E6327

Description
Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon
CategoryDiscrete semiconductor    diode   
File Size36KB,2 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BB835E6327 Overview

Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon

BB835E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum diode capacitance ratio13.5
Nominal diode capacitance9.1 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandS BAND
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL

BB835E6327 Related Products

BB835E6327 BB835E6433
Description Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon
Maker SIEMENS SIEMENS
package instruction R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Minimum diode capacitance ratio 13.5 13.5
Nominal diode capacitance 9.1 pF 9.1 pF
Diode component materials SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
frequency band S BAND S BAND
JESD-30 code R-PDSO-G2 R-PDSO-G2
Number of components 1 1
Number of terminals 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
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