Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| package instruction | R-PDSO-G2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum diode capacitance ratio | 13.5 |
| Nominal diode capacitance | 9.1 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | S BAND |
| JESD-30 code | R-PDSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |


| BB835E6327 | BB835E6433 | |
|---|---|---|
| Description | Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon | Variable Capacitance Diode, S Band, 9.1pF C(T), Silicon |
| Maker | SIEMENS | SIEMENS |
| package instruction | R-PDSO-G2 | R-PDSO-G2 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE |
| Minimum diode capacitance ratio | 13.5 | 13.5 |
| Nominal diode capacitance | 9.1 pF | 9.1 pF |
| Diode component materials | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | S BAND | S BAND |
| JESD-30 code | R-PDSO-G2 | R-PDSO-G2 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |