Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
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salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
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Thank you for your cooperation and
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Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
Low-voltage stabistor
FEATURES
•
Low-voltage stabilization
•
Forward voltage range: 580 to 960 mV
•
Total power dissipation: max. 250 mW.
APPLICATIONS
•
Low-voltage stabilization e.g.
– Bias stabilizer in class-B output stages
– Clipping
– Clamping
– Meter protection.
DESCRIPTION
Low-voltage stabilization diode in a small SOT23 plastic
package.
MARKING
TYPE NUMBER
BAS17
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C
CONDITIONS
−
−
−
−65
−
MIN.
5
200
250
+150
150
MARKING CODE
(1)
∗A9
Fig.1
3
2
n.c.
handbook, halfpage
2
BAS17
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
1
3
MAM185
Simplified outline (SOT23),
pin configuration and symbol.
MAX.
V
UNIT
mA
mW
°C
°C
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Low-voltage stabistor
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 100 mA
I
R
r
dif
S
F
C
d
reverse current
differential resistance
temperature coefficient
diode capacitance
V
R
= 4 V
I
F
= 0.5 mA
I
F
= 2 mA
I
F
= 1 mA
V
R
= 0 V; f = 1 MHz
580
665
725
750
870
−
−
−
−
−
−
−
−
−
−
−
120
80
−1.8
−
MIN.
TYP.
BAS17
MAX.
660
745
805
830
960
5
−
−
−
140
UNIT
mV
mV
mV
mV
mV
µA
Ω
Ω
mV/K
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
2003 Mar 25
3
Embedded System
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