BGA 425
Si-MMIC-Amplifier
in SIEGET
25-Technologie
4
Unconditionally stable
Multifunctional casc. 50
block (LNA / MIX)
5
6
Thermal Resistance
1
T
is measured on the ground lead at the soldering point to the pcb
S
1
Junction - soldering point
Gain |S
21
|
2
= 18.5 dB at 1.8 GHz (Appl.1)
gain |S
21
|
2
= 22 dB at 1.8 GHz (Appl.2)
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V,I
D
=9.5mA)
Noise figure
NF
= 2.2 dB at 1.8 GHz
Reverse isolation >28 dB (appl.1) >35 dB (Appl.2)
Typical device voltage
V
D
= 2 V to 5 V
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
2
1
3
VPS05604
Circuit Diagram
6
+
V
Tape loading orientation
Top View
6 5 4
W1s
123
Direction of Unreeling
Position in tape: pin 1
opposite of feed hole side
EHA07193
2, 5
GND
3
OUTA
1
IN
4
OUTB
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precaution!
EHA07371
Type
Marking
1,OutB
2,GND
Pin Configuration
3,OutA
4,IN
5,GND
6,+V
Package
SOT-363
BGA 425 BMs
Maximum Ratings
Parameter
Symbol
I
D
V
D
,+V
P
tot
P
RFin
T
j
T
A
T
stg
Value
Unit
Device current
Device voltage
Total power dissipation
,
T
S
= 120 °C
1)
25
6
150
-10
150
-65 ... 150
-65 ... 150
mA
V
mW
dBm
°C
RF input power
Junction temperature
Ambient temperature
Storage temperature
R
thJS
335
K/W
Oct-12-1999
BGA 425
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter
Symbol
Values
min.
AC characteristics
V
D
= 3V,
Z
o
= 50 , Testfixture Appl.1
Device current
Insertion power gain
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
Reverse isolation
f
= 1.8 GHz
Noise figure
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
Intercept point at the output
f
= 1.8 GHz
Return loss input
f
= 1.8 GHz
Return loss output
f
= 1.8 GHz
typ.
9.5
27
22
18.5
28
max.
10.5
-
-
-
-
Unit
I
D
|S
21
|
2
8.5
-
-
-
-
mA
dB
S12
NF
-
-
-
IP
3out
RL
in
RL
out
-
-
-
1.9
2
2.2
+7
>13
>7
-
-
-
-
-
-
dBm
dB
2
Oct-12-1999
BGA 425
Typical configuration
Application 1 - 3 (LNA)
Application 4 (Mix)
Appl.1
100 pF
RF OUT
Appl.2
2.2 pF
BGA 425
BGA 425
100 pF
100 pF
RF IN
RF OUT
100 nH
100 pF
RF IN
10 nF
+3 V
EHA07372
100 pF
10 nF
+3 V
100 pF
EHA07373
Appl.3
100 pF
RF OUT
100 pF
Appl.4
1 nF
LO
33
Ω
BGA 425
47 pF
22 nH
BGA 425
47 pF
100 pF
10 nF
100 pF
100 pF
RF IN
IF
180 nH
RF
+3 V
EHA07374
10 nF
+V
100 pF
EHA07375
Note: 1) Large-value capacitors should be connected from pin 6 to ground right at the device
to provide a low impedance path! (appl. 1)
2) The use of plated through holes right at pin 2 and 5 is essential for pc-board-applications.
Thin boards are recommended to minimize the parasitic inductance to ground!
3) For more information please see application note 028 and 030.
3
Oct-12-1999
BGA 425
Electrical characteristics
at
T
A
= 25 °C, unless otherwise specified.
VD = 3 V
Application 1 to 4
Applic.
Insertion Gain
|S
21
|
2
(dB)
Frequ. (GHz)
Noise Figure Reverse Isol.
NF
(dB)
S12 (dB)
Frequ. (GHz) Frequ. (GHz)
Return Loss
Frequ. (GHz)
Return Loss
Frequ. (GHz)
Input
RL
in
(dB) Output
RL
out
(dB)
0.1
1 (LNA)
1
22
22
20
1.8
0.1 1
1.8 0.1
2.2 46
1
32
35
30
1.8 0.1
28
37
26
19
13
8
1
19
15
10
1.8 0.1
18
8
14
10
5
15
1
12
10
17
1.8
13
11
*)
11
27
10
24
18.5 1.9 2
22
16
-
2 (LNA)
1.9 2.1 35
2.2 34
3 (LNA)
4 (MIX)
1.9 2
e.g.: RF = 900 MHz, IF = 100 MHz, VD = 3 V
Conversion gain: 20 dB
Intercept point output: 0 dBm
Noise figure: < 5 dB
LO-power: +3 dBm
*) 2.2 pF by-pass capacitance and 100 nH bias-inductance
4
Oct-12-1999
BGA 425
For linear simulation please use on-wafer measurement data of our T501 chip an add
resistive and capacitive elements, parasitics and package equivalent circuit.
S-Parameters at
T
A
= 25 °C
(On-wafer measurement data T501)
f
GHz
S
11
MAG
ANG
MAG
S
21
ANG
MAG
S
12
ANG
MAG
S
22
ANG
T1,
V
CE
= 1.7 V,
I
C
= 4.7 mA
0.1
0.7996
-8
11.8466
0.3
0.8223
-15.5
11.9814
0.5
0.8294
-26.3
11.9702
0.7
0.8162
-34.4
11.4624
0.9
0.81
-44.5
11.1452
1.1
0.793
-52.8
10.739
1.3
0.7884
-61.8
10.3219
1.5
0.7651
-69.1
9.7368
1.7
0.7534
-75.9
9.3137
1.9
0.74
-81.8
8.8247
2.1
0.7391
-88.4
8.4426
2.3
0.7335
-96
8.089
2.5
0.7186
-98.4
7.6674
2.7
0.7193
-103.1
7.3034
2.9
0.702
-108
6.7988
3.1
0.6897
-112.6
6.4921
T2,
V
CE
= 2.2 V,
I
C
= 4.7 mA
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
0.8144
0.8094
0.8251
0.8171
0.7957
0.7952
0.7953
0.767
0.7618
0.7384
0.739
0.7285
0.718
0.7294
0.6955
0.6868
-8.3
-15.3
-25.8
-34.4
-44.9
-52.5
-61.9
-68.6
-75.5
-81.3
-88.7
-95.8
-97.9
-102.9
-107.8
-111.9
11.9941
12.1389
12.1376
11.6229
11.3048
10.8874
10.4735
9.8866
9.4501
8.9757
8.5788
8.2231
7.7991
7.429
6.9444
6.6064
172.4
169
162.6
156.8
149.5
144.6
138.9
134
130.2
126
121.9
118
115.5
113.2
109.9
107.4
0.0111
0.0126
0.0163
0.019
0.0208
0.0281
0.0332
0.0373
0.0383
0.0404
0.0417
0.0451
0.0465
0.049
0.0492
0.0501
118
90.9
75.9
72.4
64.7
62.4
58.2
54
49.3
45.6
44.1
41.6
40.8
40
37
36.7
0.9942
0.9853
0.9675
0.9529
0.9286
0.9094
0.8842
0.8523
0.8221
0.7939
0.7721
0.7476
0.7339
0.716
0.6885
0.6743
0
-5.7
-9.6
-13.5
-17.2
-20.4
-23.5
-25.9
-28.2
-30.2
-32.7
-34.5
-35.7
-37.3
-38.6
-39.7
172.1
169
162.7
157
149.7
144.8
139.2
134.3
130.5
126.3
122.1
118.2
115.5
113.4
110
107.6
0.0154
0.01
0.0129
0.0183
0.0227
0.0261
0.0307
0.0325
0.0361
0.0374
0.04
0.0416
0.0463
0.043
0.0468
0.0481
129.2
80.7
76.3
70.8
70.7
64.2
60.7
54
48
49.2
44.3
39.7
40.4
38.8
35.7
34.2
0.985
0.9906
0.9728
0.9557
0.9375
0.9147
0.8916
0.8595
0.8322
0.8019
0.7857
0.7625
0.7467
0.7273
0.7077
0.689
-0.5
-5.6
-0.1
-12.7
-16
-19
-22.4
-24.5
-26.6
-28.6
-30.9
-32.9
-33.7
-35.8
-36.7
-37.6
5
Oct-12-1999
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