BTS100-E3046 datasheet, PDF - EEWORLD Datasheet

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BTS100-E3046: DescriptionPower Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size196KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BTS100-E3046 Overview

Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BTS100-E3046 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	TO-220AB
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	230 pF
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	40 W
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	165 ns
Maximum opening time (tons)	125 ns

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BTS100-E3046 Related Products

	BTS100-E3046	BTS100-E3044
Description	Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN
Maker	SIEMENS	SIEMENS
Parts packaging code	TO-220AB	TO-220AB
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (ID)	8 A	8 A
Maximum drain-source on-resistance	0.3 Ω	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	230 pF	230 pF
JESD-30 code	R-PSIP-T3	R-PSSO-G3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	40 W	40 W
Maximum pulsed drain current (IDM)	32 A	32 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	165 ns	165 ns
Maximum opening time (tons)	125 ns	125 ns

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