HB52RD168DB-A6FL datasheet, PDF

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HB52RD168DB-A6FL: DescriptionSynchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144; Categorystorage storage; File Size863KB，65 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB52RD168DB-A6FL Overview

Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144

HB52RD168DB-A6FL Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
length	67.6 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	144
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	16MX4
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	25.4 mm
self refresh	YES
Maximum standby current	0.016 A
Maximum slew rate	1.76 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
width	3.8 mm

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HB52RD168DB-F

128 MB Unbuffered SDRAM S.O.DIMM

16-Mword

64-bit, 100 MHz Memory Bus, 1-Bank Module

(16 pcs of 16 M

4 components)

PC100 SDRAM

ADE-203-1097A (Z)

Rev. 1.0

Jan. 24, 2000

Description

The HB52RD168DB is a 16M

1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Memory Module (S.O.DIMM), mounted 16 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP

package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52RD168DB

is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, the HB52RD168DB makes

high density mounting possible without surface mount technology. The HB52RD168DB provides common

data inputs and outputs. Decoupling capacitors are mounted beside TCP on the module board.

Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would

be electrical defects.

Features

•

Fully compatible with JEDEC standard outline 8-byte S.O.DIMM

•

144-pin Zig Zag Dual tabs socket type



Outline: 67.60 mm (Length)

25.40 mm (Height)

3.80 mm (Thickness)



Lead pitch: 0.80 mm

•

3.3 V power supply

•

Clock frequency: 100 MHz

•

LVTTL interface

•

Data bus width:

64 Non parity

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length : 1/2/4/8/full page

•

2 variations of burst sequence

HB52RD168DB-A6FL Related Products

	HB52RD168DB-A6FL	HB52RD168DB-B6FL	HB52RD168DB-B6F	HB52RD168DB-A6F
Description	Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144
Parts packaging code	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
Maximum clock frequency (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
length	67.6 mm	67.6 mm	67.6 mm	67.6 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	4	4	4	4
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	144	144	144	144
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	65 °C	65 °C	65 °C	65 °C
organize	16MX4	16MX4	16MX4	16MX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096
Maximum seat height	25.4 mm	25.4 mm	25.4 mm	25.4 mm
self refresh	YES	YES	YES	YES
Maximum standby current	0.016 A	0.016 A	0.016 A	0.016 A
Maximum slew rate	1.76 mA	1.76 mA	1.76 mA	1.76 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
width	3.8 mm	3.8 mm	3.8 mm	3.8 mm
Maker	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）

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