TLRMH157P
TOSHIBA LED Lamp InGaAℓP Red Light Emission
TLRMH157P
·
·
·
·
·
·
·
·
·
·
5 mm diameter (T1−3 / 4)
InGaAℓP red LED
All plastic mold type.
Colorless clear lens
Low drive current, high intensity red light emission
All plastic molded lens, provides an excellent on−off
contrast ratio.
Fast response time, capable of pulse operation.
High power luminous intensity
Without stand−offs
Traffic signals, exit sign.
Unit in mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Forward current (DC)
Reverse voltage
Power dissipation
Operating temperature range
Storage temperature range
Symbol
I
F
V
R
P
D
T
opr
T
stg
Rating
50
4
125
-40~100
-40~120
Unit
mA
V
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.31 g
―
―
1
2002-09-25
TLRMH157P
Electrical And Optical Characteristics
(Ta
=
25°C)
Characteristics
Forward voltage
Reverse current
Luminous intensity
Peak emission wavelength
Spectral line half width
Dominant wavelength
Symbol
V
F
I
R
I
V
λ
P
∆λ
λ
d
I
F
= 20mA
V
R
= 4V
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
(Note)
Test Condition
Min
―
―
850
―
―
―
Typ.
2.05
―
2240
636
20
626
Max
2.5
50
―
―
―
―
Unit
V
µA
mcd
nm
nm
nm
(Note): Lamps are classified into the following ranks according to their luminous intensity.
Measurement tolerance for each limit is ±15%.
S: 1000−2000 mcd, T: 1800−3600 mcd, U: 3200−6400 mcd
Precaution
Please be careful of the followings
·
·
·
Soldering temperature: 260°C max Soldering time: 3s max
(Soldering portion of lead: Up to 2mm from the body of the device)
If the lead is formed, the lead should be formed up to 5mm from the body of the device without
forming stress to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp,
please ensure that it will not be affected by this IR light.
2
2002-09-25
TLRMH157P
I
F
– V
F
50
30
Ta = 25°C
5000
3000
Ta = 25°C
I
V
– I
F
(mA)
(mcd)
I
V
Luminous intensity
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1000
500
300
Forward current I
F
10
5
3
100
50
20
1
1
1.6
3
5
10
30
50
100
300 500
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
3
1.0
Relative Luminous Intensity _
Wavelength
IF = 20mA
Ta = 25°C
I
V
Relative luminous intensity
1
Relative luminous intensity
0.8
0.6
0.5
0.3
0.4
0.2
0.1
−
20
0
20
40
60
80
0
580
600
620
640
660
680
700
Case temperature Tc
(°C)
Wavelength
λ
(nm)
Radiation Pattern
Ta = 25 °C
80
I
F
– Ta
Allowable forward current
I
F
(mA)
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
60
20°
30°
40°
50°
60°
70°
80°
40
20
0
0.2
0.4
0.6
0.8
90°
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2002-09-25
TLRMH157P
RESTRICTIONS ON PRODUCT USE
000707EAC
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
4
2002-09-25
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
