DISCRETE SEMICONDUCTORS
DATA SHEET
BLW898
UHF linear power transistor
Product specification
Supersedes data of 1995 Oct 04
1996 Jul 16
Philips Semiconductors
Product specification
UHF linear power transistor
FEATURES
•
Internal input matching for wideband operation and high
power gain
•
Polysilicon emitter ballasting resistors for an optimum
temperature profile
•
Gold metallization ensures excellent reliability.
APPLICATION
•
Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor in a SOT171A 6-lead
rectangular flange package, with a ceramic cap. The
transistor delivers a P
o sync
= 3 W in class-A operation at
860 MHz and a supply voltage of 25 V.
PINNING SOT171A
PIN
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
BLW898
DESCRIPTION
handbook, halfpage
2 4 6
c
b
1 3 5
Top view
MAM141
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common emitter test circuit.
MODE OF
OPERATION
CW class-A
Note
1. Three-tone test signal (−8,
−16,
and
−10
dB); d
im
=
−63
dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
f
(MHz)
860
V
CE
(V)
25
I
CQ
(A)
1.1
P
o sync
(W)
≥3
(1)
G
p
(dB)
≥9
(1)
1996 Jul 16
2
Philips Semiconductors
Product specification
UHF linear power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
up to T
mb
= 70
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
MIN.
BLW898
MAX.
60
28
2.5
3.7
3.7
44
+150
200
V
V
V
A
A
W
UNIT
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to
mounting-base
thermal resistance from
mounting-base to heatsink
CONDITIONS
P
tot
= 44 W; T
mb
= 70
°C
VALUE
3
0.3
UNIT
K/W
K/W
handbook, halfpage
120
MGD531
Ptot
(W)
80
(2)
(1)
40
0
0
40
80
120
Tmb
°C
160
(1) Continuous operation
(2) Short-time operation during mismatch.
Fig.2
Power derating curve.
1996 Jul 16
3
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
C
c
C
re
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
collector-emitter leakage current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
I
C
= 15 mA; I
E
= 0
I
C
= 30 mA; I
B
= 0
I
E
= 0.6 mA; I
C
= 0
V
BE
= 0; V
CB
= 28 V
V
CE
= 20 V
V
CE
= 25 V; I
C
= 1.1 A
V
CB
= 25 V; I
E
= i
e
= 0;
f = 1 MHz
MIN.
60
28
2.5
−
−
30
−
TYP.
−
−
−
−
−
−
18
11
BLW898
MAX.
−
−
−
1.5
3
140
−
−
UNIT
V
V
V
mA
mA
pF
pF
V
CB
= 25 V; I
C
= 0; f = 1 MHz
−
MGD532
handbook, halfpage
160
handbook, halfpage
60
MGD533
hFE
120
Cc
(pF)
40
80
20
40
0
0
1
2
IC (A)
3
0
0
10
20
30
VCB (V)
40
V
CE
= 25 V; t
p
= 500
µs; δ
= <1 %.
I
E
= i
e
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
1996 Jul 16
4
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common emitter class-A test circuit.
MODE OF
OPERATION
CW class-A
CW class-A
Notes
f
(MHz)
860
860
V
CE
(V)
25
25
I
CQ
(A)
1.1
1.1
P
o sync
(W)
≥3
(1)
≥3
(2)
G
p
(dB)
≥9
(1)
≥9
(2)
BLW898
d
im
(dB)
<−63
(1)
<−60
(2)
1. Three-tone test method (vision carrier
−8
dB, sound carrier
−10
dB, sideband signal
−16
dB), 0 dB corresponds to
peak sync level.
2. Three-tone test method (vision carrier
−8
dB, sound carrier
−7
dB, sideband signal
−16
dB), 0 dB corresponds to
peak sync level.
Ruggedness in class-A operation
The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the
conditions: V
CE
= 25 V; I
CQ
= 1.1 A; T
h
= 25
°C;
f = 860 MHz; P
o sync
= 3 W.
MGD534
handbook, halfpage
30
handbook, halfpage
12
MGD535
Po sync
(W)
(1)
Gp
(dB)
(2)
(1)
(2)
20
8
10
4
0
0
1
2
3
4
Pi sync (W)
0
0
10
20
Po sync (W)
V
CE
= 25 V; I
CQ
= 1.1 A; f = 860 MHz; (3-tone;
−8/−16/−10
dB).
(1) T
h
= 25
°C.
(2) T
h
= 70
°C.
30
V
CE
= 25 V; I
CQ
= 1.1 A; f = 860 MHz; (3-tone;
−8/−16/−10
dB).
(1) T
h
= 25
°C.
(2) T
h
= 70
°C.
Fig.5
Output power as a function of input power;
typical values.
Fig.6
Power gain as a function of output power;
typical values.
1996 Jul 16
5
京公网安备 11010802033920号
EEWORLD
