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BC184RL

Description
100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size321KB,34 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC184RL Overview

100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

BC184RL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC, TO-226AA, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)130
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)280 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC182,A,B
BC183
BC184
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC182
50
60
BC183
30
45
6.0
100
350
2.8
1.0
8.0
– 55 to +150
BC184
30
45
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
V(BR)CEO
BC182
BC183
BC184
V(BR)CBO
BC182
BC183
BC184
V(BR)EBO
ICBO
BC182
BC183
BC184
IEBO
0.2
0.2
0.2
15
15
15
15
nA
60
45
45
6.0
V
nA
50
30
30
V
V
Collector – Base Breakdown Voltage
(IC = 10
m
A, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100
m
A, IC = 0)
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
(VCB = 30 V, VBE = 0)
Emitter–Base Leakage Current
(VEB = 4.0 V, IC = 0)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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