Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Switching.
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
handbook, halfpage
BCP54; BCP55; BCP56
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
3
1
Top view
2
3
MAM287
Fig.1
Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BCP54
BCP55
BCP56
V
CEO
collector-emitter voltage
BCP54
BCP55
BCP56
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
45
60
80
5
1
1.5
0.2
1.33
+150
150
+150
V
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
45
60
100
V
V
V
MIN.
MAX.
UNIT
2001 Oct 10
2
Philips Semiconductors
Product specification
NPN medium power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCP54; BCP55; BCP56
CONDITIONS
note 1
VALUE
94
13
UNIT
K/W
K/W
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
h
FE
DC current gain
BCP55-10; 56-10
BCP54-16; 55-16; 56-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 0.5 A; I
B
= 50 mA
I
C
= 0.5 A; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
I
C
= 150 mA; V
CE
= 2 V
63
100
−
−
−
−
MIN.
−
−
−
63
63
40
TYP.
−
−
−
−
−
−
−
−
−
−
−
130
−
160
250
500
1
−
1.6
mV
V
MHz
MAX.
100
10
100
−
250
−
UNIT
nA
µA
nA
2001 Oct 10
3
Philips Semiconductors
Product specification
NPN medium power transistors
DATA SHEET STATUS
DATA SHEET STATUS
(1)
Objective data
PRODUCT
STATUS
(2)
Development
BCP54; BCP55; BCP56
DEFINITIONS
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 10
5
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