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HERF1007GA

Description
Rectifier Diode, 10A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size75KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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HERF1007GA Overview

Rectifier Diode, 10A, 800V V(RRM),

HERF1007GA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current125 A
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.08 µs
surface mountNO
Pr
el
im
HERF1001G
THRU
HERF1008G
in
ar
y
Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers
Preliminary
Voltage Range
50 to 1000 Volts
Current
10.0 Amperes
Features
a
a
a
a
a
a
a
a
a
a
ITO-220AB
.185(4.7)
MAX
Low forward voltage drop
High current capability
High reliability
High surge current capability
.406(10.3)MAX
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.124(3.16)
MAX
.112(2.85)
.100(2.55)
.606(15.5)
.583(14.8)
Mechanical Data
Case: ITO-220AB molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
Terminals:
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
250°C/ 0.25” (6.35mm) from case for 10
seconds.
Mounting torque: 5 in – 1bs. max.
Weight: 2.24 grams
.161(4.1)
MAX
.110(2.8)
.098(2.5)
.030(0.76)
MAX
.055(1.4)
MAX
.035(0.9)
MAX
.543(13.8)
.512(13.2)
.100(2.55)
.100(2.55)
a
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 100°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=125°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance RÛJC (Note 3)
HERF HERF HERF HERF HERF HERF HERF HERF
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Units
V
V
V
A
A
50
35
50
100
70
100
200 300
140 210
200 300
400
280
400
600 800 1000
420 560 700
600 800 1000
10.0
125
1.0
1.3
10.0
400
50
80
80
50
1.7
V
uA
uA
nS
pF
°C
/W
°C
°C
5.0
Operating Temperature Range T
J
-65 to +150
Storage Temperature Range T
STG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes:
3. Thermal Resistance from Junction to Case per Leg Mounted on Heatsink.
- 194 -

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Description Rectifier Diode, 10A, 800V V(RRM), Rectifier Diode, 10A, 300V V(RRM), Rectifier Diode, 10A, 100V V(RRM), Rectifier Diode, 10A, 100V V(RRM), Rectifier Diode, 10A, 200V V(RRM), Rectifier Diode, 10A, 600V V(RRM), Rectifier Diode, 10A, 1000V V(RRM), Rectifier Diode, 10A, 200V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V 1 V 1 V 1 V 1 V 1.7 V 1.7 V 1 V
Humidity sensitivity level 1 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A 125 A 125 A 125 A
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
Maximum repetitive peak reverse voltage 800 V 300 V 100 V 100 V 200 V 600 V 1000 V 200 V
Maximum reverse recovery time 0.08 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.08 µs 0.08 µs 0.05 µs
surface mount NO NO NO NO NO NO NO NO
Maker Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor - - Taiwan Semiconductor Taiwan Semiconductor
Base Number Matches - 1 1 1 1 1 - -
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