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BSS138PS_15

Description
60 V, 320 mA dual N-channel Trench MOSFET
File Size149KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BSS138PS_15 Overview

60 V, 320 mA dual N-channel Trench MOSFET

BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
V
GS
= 10 V
T
j
= 25
°C;
V
GS
= 10 V;
I
D
= 300 mA
[1]
Min
-
-
-
-
Typ
-
-
-
0.9
Max
60
±20
320
1.6
Unit
V
V
mA
Ω
Per transistor
[2]
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
2
.
Pulse test: t
p
300
μs; δ ≤
0.01.
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